Skip to main content Accessibility help
×
Home
Hostname: page-component-7ccbd9845f-6pjjk Total loading time: 0.379 Render date: 2023-02-01T08:52:01.776Z Has data issue: true Feature Flags: { "useRatesEcommerce": false } hasContentIssue true

Quantitative Strain Mapping Applied to Aberration-Corrected HAADF Images

Published online by Cambridge University Press:  14 July 2006

Ana M. Sanchez
Affiliation:
Departamento de Ciencia de los Materiales e I. M. y Q.I., Universidad de Cadiz, Puerto Real 11510, Spain
Pedro L. Galindo
Affiliation:
Departamento de Lenguajes y Sistemas Informaticos, Universidad de Cadiz, Puerto Real 11510, Spain
Slawomir Kret
Affiliation:
Institute of Physics, Polish Academy of Science, Al. Lotnikow 32/46. PL-020668 Warzawa, Poland
Meiken Falke
Affiliation:
UK SuperSTEM, Daresbury Laboratory, Daresbury WA4 4AD, United Kingdom
Richard Beanland
Affiliation:
Bookham Technology, Caswell, Towcester, Northants NN12 8EQ, United Kingdom
Peter J. Goodhew
Affiliation:
Department of Engineering, University of Liverpool, Liverpool L69 3GH, United Kingdom
Get access

Abstract

A systematic distortion in high-angle annular dark-field scanning transmission electron microscope (HAADF-STEM) images, which may be caused by residual electrical interference, has been evaluated. Strain mapping, using the geometric phase methodology, has been applied to images acquired in an aberration-corrected STEM. This allows this distortion to be removed and so quantitative analysis of HAADF-STEM images was enabled. The distortion is quantified by applying this technique to structurally perfect and strain-free material. As an example, the correction is used to analyse an InAs/GaAs dot-in-quantum well heterostructure grown by molecular beam epitaxy. The result is a quantitative measure of internal strain on an atomic scale. The measured internal strain field of the heterostructure can be interpreted as being due to variations of indium concentration in the quantum dot.

Type
MATERIALS APPLICATIONS
Copyright
© 2006 Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Beanland, R. (2003). Rapid cross-section TEM specimen preparation of III-V materials. Microsc Today 11, 2931.CrossRefGoogle Scholar
Bierwolf, R., Hohenstein, M., Phillipp, F., Brandt, O., Crook, G.E., & Ploog, K. (1993). Direct measurement of local lattice-distortions in strained layer structures by HREM. Ultramicroscopy 49, 273285.CrossRefGoogle Scholar
Bithell, E.G. & Stobbs, W.M. (1989). Composition determination in the GaAs/(Al, Ga)As system using contrast in dark-field transmission electron-microscope images. Philos Mag A 60, 3962.CrossRefGoogle Scholar
Bithell, E.G. & Stobbs, W.M. (1991). III-V ternary semiconductor heterostructures—The choice of an appropriate compositional analysis technique. J Appl Phys 69, 21492155.CrossRefGoogle Scholar
Galindo, P.L., Yañez, A., Pizarro, J., Guerrero, E., Ben, T., & Molina, S.I. (2006). Strain mapping from HRTEM images. In Proceedings of the Microscopy of Semiconducting Materials XIV Conference. Oxford: Institute of Physics (in press).Google Scholar
Hÿtch, M.J. & Plamann, T. (2001). Imaging conditions for reliable measurement of displacement and strain in high-resolution electron microscopy. Ultramicroscopy 87, 199212.CrossRefGoogle Scholar
Hÿtch, M.J., Snoeck, E., & Kilaas, R. (1998). Quantitative measurement of displacement and strain fields from HREM micrographs. Ultramicroscopy 74, 131146.CrossRefGoogle Scholar
Kret, S., Ruterana, P., Rosenauer, A., & Gerthsen, D. (2001). Extracting quantitative information from high resolution electron microscopy. Phys Stat Sol B 227, 247295.3.0.CO;2-F>CrossRefGoogle Scholar
Krivanek, O.L., Dellby, N., & Lupini, A.R. (1999). Towards sub-angstrom electron beams. Ultramicroscopy 78, 111.Google Scholar
Rosenauer, A. (2003). Transmission Electron Microscopy of Semiconductor Nanostructures. An Analysis of Composition and Strain State. Berlin: Springer.Google Scholar
Rosenauer, A., Remmele, T., Gerthsen, D., Tillmann, K., & Förster, A. (1997). Atomic scale strain measurements by the digital analysis of transmission electron microscopic lattice images. Optik 105, 99107.Google Scholar
Ruterana, R., Kret, S., Maciejewski, G., & Dluzewski, P. (2002). Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers. J Appl Phys 91, 89798985.CrossRefGoogle Scholar
Sanchez, A.M., Galindo, P.L., Kret, S., Falke, M., Beanland, R., & Goodhew, P.J. (2006). An approach to the systematic distortion correction in aberration corrected HAADF images. J Microsc 221, 17.Google Scholar
22
Cited by

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Quantitative Strain Mapping Applied to Aberration-Corrected HAADF Images
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Quantitative Strain Mapping Applied to Aberration-Corrected HAADF Images
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Quantitative Strain Mapping Applied to Aberration-Corrected HAADF Images
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *