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The Influence of Dopant Type on Polysilicon Grain Growth and Solid Phase Epitaxial Regrowth
Published online by Cambridge University Press: 02 July 2020
Extract
A recent process technology to manufacture bipolar junction transistors utilizes polysilicon emitters. Polysilicon is deposited, appropriately doped to form both NPN and PNP transistors, and exposed to temperatures that result in grain growth. Since polysilicon is in contact with Si( 100) at the emitter, base, and collector (Fig. 1), solid phase epitaxial regrowth might also occur. Production runs with this structure occasionally produce transistors with low current gain. High and low gain NPN and PNP transistors were characterized by transmission electron microscopy.
Vertical sections through NPN/PNP transistor arrays were made by the wedge technique, low-angle ion milled to electron-transparency, and viewed at 200 KV. The grain size of the polysilicon on oxide was recorded and estimated. The extent of epitaxial regrowth was quantified for each of the Si (100) contact areas. Convergent Beam Electron Diffraction (CBED) was used to confirm the orientation of the presumed regrown polysilicon.
- Type
- Recent Developments in Microscopy for Studying Electronic and Magnetic Materials
- Information
- Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 477 - 478
- Copyright
- Copyright © Microscopy Society of America 1997
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