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Nanolithography for VLSI and ULSI
Published online by Cambridge University Press: 09 March 2009
Abstract
Lithography techniques hold the key to achieving ultra large-scale integration (ULSI) and they have been a major research subject. For fabrication of ULSI devices, a quarter micron or smaller pattern delineation with nanometer scale accuracy is required. Various techniques using electron, ion and photon beams have been investigated to fulfill these requirements. The present paper discusses the characteristics of several key lithography techniques and their limitations.
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- Copyright © Cambridge University Press 1989