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Laser ion implantation of Ge in SiO2 using a post-ion acceleration system

Published online by Cambridge University Press:  22 December 2016

M. Cutroneo ,
A. Mackova ,
L. Torrisi  and
V. Lavrentiev
M. Cutroneo*
Affiliation:
Department of Neutron Physics, Nuclear Physics Institute, AS CR, 25068 Rez, Czech Republic INFN, Sez. CT, Gruppo Coll. ME, V.le F.S. d'Alcontres 31, 98166 S. Agata (ME), Italy
A. Mackova
Affiliation:
Department of Neutron Physics, Nuclear Physics Institute, AS CR, 25068 Rez, Czech Republic Department of Physics, Faculty of Science, J.E. Purkinje University, Ceske mladeze 8, 400 96 Usti nad Labem, Czech Republic
L. Torrisi
Affiliation:
Department of Physics Sciences, Messina University, V.le F.S. d'Alcontres 31, 98166 S. Agata, Messina, Italy
V. Lavrentiev
Affiliation:
Department of Neutron Physics, Nuclear Physics Institute, AS CR, 25068 Rez, Czech Republic
*
Address correspondence and reprint requests to: M. Cutroneo, Nuclear Physics Institute, AS CR, 25068 Rez, Czech Republic. E-mail: cutroneo@ujf.cas.cz
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Abstract

This work reports a comparative study of laser ion implantation mainly performed at the Nuclear Physics Institute in Rez (Czech Republic), National Institute of Nuclear Physics (Italy), and the Plasma Physics Laboratory at the University of Messina (Italy) using different approaches. Thick metallic targets were irradiated in vacuum by a focused laser beam to generate plasma-producing multi-energy and multi-species ions. A post-acceleration system was employed in order to increase the energy of the produced ions and to generate ion beams suitable to be implanted in different substrates. The ion dose was controlled by the laser repetition rate and the time of irradiation. Rutherford backscattering analysis was carried out to evaluate the integral amount of implanted ion species, the concentration–depth profiles, the ion penetration depth, and the uniformity of depth profiles for ions laser implanted into monocrystalline substrates. The laser implantation under normal conditions and in post-acceleration configuration will be discussed on the basis of the characterization of the implanted substrates.

Keywords

Laser ion implantationPost-acceleration
Type
Research Article
Information
Laser and Particle Beams , Volume 35 , Issue 1 , March 2017 , pp. 72 - 80
Copyright
Copyright © Cambridge University Press 2016 

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References

Chui, C.O. & Saraswat, K.C. (2007). Advanced germanium MOS devices. In Germanium-based Technologies: From Materials to Devices (Claeys, C. and Simoen, E., Eds.), pp. 363–386. Amsterdam: Elsiever Science.Google Scholar
Cutroneo, M., Torrisi, L., Ullschmied, J. & Dudzak, R. (2016). Multi-energy ion implantation from high-intensity laser. Nukleonika 61, 2.Google Scholar
Gadelmawla, E.S., Koura, M.M., Maksoud, T.M.A., Elewam, I.M. & Soliman, H.H. (2002). Roughness parameters. Mater. Proc. Technol. 123, 133–145.Google Scholar
Hlubina, P., Lunacek, J. & Ciprian, D. (2009). The effect of silicon substrate on thickness of SiO2 thin film analysed by spectral reflectometry and interferometry. Appl. Phys. B, Lasers Opt. 95, 795–799.Google Scholar
Honsberg, C. & Bowden, S. pveducation.org, the actual website 2016: http://www.pveducation.org/pvcdrom/materials/optical-properties-of-silicon Google Scholar
Janos Technology. IR coating information, the actual website 2016: http://www.janostech.com/knowledge-center/faqs.html Google Scholar
Kaufmann, R., Isella, G., Sanchez-Amores, A., Neukom, S., Neels, A., Neumann, L., Brenzikofer, A., Dommann, A., Urban, C. & von Kanel, H. (2011). Near infrared image sensor with integrated germanium photodiodes. J. Appl. Phys. 110, 023107.CrossRefGoogle Scholar
Keiji, O., Shunichi, H., Wada, K., Suehara, S. & Aizawa, T. (1996). Roughness study of ion-irradiated silica glass surface. Appl. Surf. Sci. 100/101, 374–377.Google Scholar
Kim, Y., Takenaka, M., Osad, T., Osada, T., Hata, M. & Takagi, S. (2014). Fabrication and evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulator. Thin Solid Films 557, 342–345.Google Scholar
Kubiak, K.J., Wilson, M.C.T., Mathia, T.G. & Carras, S. (2011). Dynamics of contact line motion during the wetting of rough surfaces and correlation with topographical surface parameters. Scanning 33, 370–377.Google Scholar
Lavrientev, V., Stupakov, A., Pokorny, J., Lavrentieva, I., Vacik, J., Dejneka, A., Barchuk, M. & Čapková, P. (2015). Contrasting magnetism in dilute and supersaturated cobalt–fullerene mixture films. J. Phys. D: Appl. Phys. 48, 335002.Google Scholar
Leem, J.W., Lee, H.K., Jun, D.H., Heo, J., Park, W.K., Park, J.H. & Yu, J.S. (2014). Electrochemically synthesized broadband antireflective and hydrophobic GaOOH nanopillars for III–V InGaP/GaAs/Ge triple-junction solar cell applications. Opt. Express 22, A328–A334.Google Scholar
Mayer, M. (1999). SIMNRA, a simulation program for the analysis of NRA, RBS and ERDA. In Proceedings of the 15th International Conference on the Application of Accelerators in Research and Industry, in: AIP Conference Proceedings (Duggan, J.L. and Morgan, I., Eds.), Vol. 475, p. 541. Woodbury, New York: American Institute of Physics .Google Scholar
NIST (2016). http://physics.nist.gov/cgi-bin/ASD/ie.pl Google Scholar
Onyegam, E.U., Sarkar, D., Hilali, M., Saha, S., Rao, R.A., Mathew, L., Jawarani, D., Mantey, J., Ainom, M., Garcia, R., James, W. & Banerjee, S.K. (2013). Exfoliated, thin, flexible germanium heterojunction solar cell with record FF=58.1%. Sol. Energy Mater. Sol. Cells 111, 206–211.Google Scholar
Osborne, K.L. III (2009). Temperature-Dependence of the Contact Angle of Water on Graphite, Silicon and Gold. Master Thesis. Worcester: Worcester Polytechnic Institute.Google Scholar
Oyoshi, K., Tagami, T. & Tanaka, S. (1991). Smoothing of silica glass surfaces by ion implantation. Jpn. J. Appl. Phys. 30, 1854.Google Scholar
Pham, M.T., Matz, W. & Seifarth, H. (1997). Surface roughness with nanometer-scale Ag particles generated by ion implantation. Anal. Chim. Acta 350, 209–220.Google Scholar
Torrisi, L. (2016). Coulomb–Boltzmann-shifted distribution in laser-generated plasmas from 1010 up to 1019 W/cm2 intensity. Radiat. Eff. Defects Solids 171, 34–44.Google Scholar
Torrisi, L., Cavallaro, S., Giuffrida, L., Gammino, S. & Ando’, L. (2010). Ti post-ion acceleration from a laser ion source. Radiat. Eff. Defects Solids 165, 509–520.Google Scholar
Torrisi, L. & Cutroneo, M. (2016). Elastic recoil detection analysis (ERDA) in hydrogenated samples for TNSA laser irradiation. Surf. Interface Anal. 48, 10–16.CrossRefGoogle Scholar
Wołowski, J., Badziak, J., Czarnecka, A., Parys, P., Pisarek, M., Rosinski, M., Turan, R. & Yerci, S. (2008). Applications of ions produced by low intensity repetitive laser pulses for implantation into semiconductor materials. Radiat. Eff. Defects Solids 163, 589–595.Google Scholar
Ziegler, J.F. (2010). SRIM – the stopping and range of ions in matter. Nucl. Instrum. Methods Phys. Res. B, Beam Interact. Mater. At. 268, 1818–1823.Google Scholar