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TEM observations of the mechanism of delamination of chromium films from silicon substrates

Published online by Cambridge University Press:  31 January 2011

D. Goyal  and
A.H. King
D. Goyal
Affiliation:
Department of Materials Science and Engineering, State University of New York at Stony Brook, Stony Brook, New York 11794-2275
A.H. King
Affiliation:
Department of Materials Science and Engineering, State University of New York at Stony Brook, Stony Brook, New York 11794-2275
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Abstract

We have observed the complete delamination of polycrystalline chromium films from single crystal silicon substrates during deposition due to the formation of high internal stresses. These intrinsic stresses can give rise to interfacial defects which assist in the separation of the film from the substrate. Stresses in the film are balanced by stresses in the substrate, which cause mechanical failure in the substrate near the interface. Extensive arrays of dislocations and cracking of the substrate have been observed. We find that the delamination of the films from the substrate is initiated by the formation of damage in the substrate, rather than to the film or the interface.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 2 , February 1992 , pp. 359 - 366
Copyright
Copyright © Materials Research Society 1992

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