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Tb L3-edge X-ray Absorption Near-edge Structure Spectroscopic Analysis of Terbium-doped Phosphor Compoundsfor Plasma Display Panel Applications

Published online by Cambridge University Press:  31 January 2011

Yong Gyu Choi
Affiliation:
Telecommunication Basic Research Laboratory, Electronics and Telecommunications Research Institute, Taejon 305–600, Republic of Korea
Kee-Sun Sohn*
Affiliation:
Department of Materials Science and Metallurgical Engineering, Sunchon National Univeristy,Sunchon, Chonam 540–742, Republic of Korea
Kyong Hon Kim
Affiliation:
Telecommunication Basic Research Laboratory, Electronics and Telecommunications Research Institute, Taejon 305–600, Republic of Korea
Hee Dong Park
Affiliation:
Display Phosphor Group, Korea Research Institute of Chemical Technology,Taejon 305–600, Republic of Korea
*
a)Address all correspondence to this author. e-mail: kssohn@sunchon.ac.kr
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Abstract

We have analyzed Tb L3-edge x-ray absorption near-edge structure spectra of Tb-doped phosphor compounds for plasma display panel applications. Intensity and lifetime of the green emission from the Tb3+:5D47F5 transition were measured with respect to nominal terbium concentration in the host compounds, i.e., YBO3, YPO4,and Y4Al2O9, all of which were made through the solid-state reaction. Typical concentration quenching was evident on the fluorescence intensity and the fluorescing level lifetime in our samples. From the analyses of white line absorption peaks at TbL3-edge, it was verified that terbium is essentially trivalent in all the samples, even invery highly concentrated ones. Thus, this implies that the concentration quenching was not caused by presence of mixed-valent states of terbium. Instead, it is believed that anonradiative energy transfer route among Tb3+ ions might be responsible for thebehavior.

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Articles
Copyright
Copyright © Materials Research Society 2002

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