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Surface oxidation of molten Sn–0.07 wt% P in air at 280 °C

Published online by Cambridge University Press:  31 January 2011

Ai-Ping Xian  and
Guo-Liang Gong
Ai-Ping Xian*
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, Shenyang 110016, People’s Republic of China
Guo-Liang Gong
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, Shenyang 110016, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: ap.xian@imr.ac.cn
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Abstract

In this article, we describe oxidation of molten Sn–0.07 wt% P alloy exposed in air at 280 °C. Although oxidation can be effectively reduced by the addition of trace phosphorus, the oxide film has a poor protection for the molten alloy with a high P concentration. The oxide film was analyzed by x-ray photoelectron spectroscopy. Comparing the results with the low P sample, there was a high phosphorous content in the film and a new Sn–P compound on the surface of the high P sample. It is assumed that the poor protection against oxidation of the film could be due to volatility of phosphorus in the Sn–P alloy at the temperature.

Keywords

OxidationSnLiquid
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 6 , June 2008 , pp. 1532 - 1536
Copyright
Copyright © Materials Research Society 2008

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References

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