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Recrystallization of ion-implanted α-SiC

Published online by Cambridge University Press:  31 January 2011

H. G. Bohn ,
J. M. Williams ,
C. J. McHargue  and
G. M. Begun
H. G. Bohn
Affiliation:
Institut für Festkörperforschung, Kernforschungsanlage Jülich, Postfach 1913, D-5170 Jülich, Federal Republic of Germany
J. M. Williams
Affiliation:
Oak Ridge National Laboratory, P.O. Box X, Oak Ridge, Tennessee 37831
C. J. McHargue
Affiliation:
Oak Ridge National Laboratory, P.O. Box X, Oak Ridge, Tennessee 37831
G. M. Begun
Affiliation:
Oak Ridge National Laboratory, P.O. Box X, Oak Ridge, Tennessee 37831
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Abstract

The annealing behavior of ion-implanted α-SiC single crystal was determined for samples implanted with 62 keV 14N to doses of 5.5X1014/cm2 and 8.0X1016/cm2 and with 260 keV 52Cr to doses of 1.5X1014/cm2 and 1.0X1016/cm2. The high-dose samples formed amorphous surface layers to depths of 0.17 μm (N) and 0.28 μm (Cr), while for the low doses only highly damaged but not randomized regions were formed. The samples were isochronically annealed up to 1600°C, holding each temperature for 10 min. The remaining damage was analyzed by Rutherford backscattering of 2 MeV He+, Raman scattering, and electron channeling. About 15% of the width of the amorphous layers regrew cpitaxially from the underlying undamaged material up to 1500°C, above which the damage annealed rapidly in a narrow temperature interval. The damage in the crystalline samples annealed linearly with temperature and was unmeasurable above 1000°C.

Type
Articles
Information
Journal of Materials Research , Volume 2 , Issue 1 , February 1987 , pp. 107 - 116
Copyright
Copyright © Materials Research Society 1987

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References

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