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On temperature dependence of deformation mechanism and the brittle–ductile transition in semiconductors

Published online by Cambridge University Press:  31 January 2011

P. Pirouz ,
A. V. Samant ,
M. H. Hong ,
A. Moulin  and
L. P. Kubin
P. Pirouz*
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106-7204, U.S.A.
A. V. Samant
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106-7204, U.S.A.
M. H. Hong
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106-7204, U.S.A.
A. Moulin
Affiliation:
LEM, CNRS-ONERA, B.P. 72, 29, Av. de la Division Leclerc, 92322 Châtillon Cedex, France
L. P. Kubin
Affiliation:
LEM, CNRS-ONERA, B.P. 72, 29, Av. de la Division Leclerc, 92322 Châtillon Cedex, France
*
a) e-mail: pirouz@cwmsd.mse.cwru.edu
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Abstract

Recent deformation experiments on semiconductors have shown the occurrence of a break in the variation of the critical resolved shear stress of the crystal as a function of temperature. These and many other examples in the literature evidence a critical temperature at which a transition occurs in the deformation mechanism of the crystal. In this paper, the occurrence of a similar transition in two polytypes of SiC is reported and correlated to the microstructure of the deformed crystals investigated by transmission electron microscopy, which shows evidence for partial dislocations carrying the deformation at high stresses and low temperatures. Based on these results and data in the literature, the explanation is generalized to other semiconductors and a possible relationship to their brittle–ductile transition is proposed.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 7 , July 1999 , pp. 2783 - 2793
Copyright
Copyright © Materials Research Society 1999

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