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Modeling of the effects of crystallographic orientation on electromigration-limited reliability of interconnects with bamboo grain structures

Published online by Cambridge University Press:  31 January 2011

W. R. Fayad ,
V. K. Andleigh  and
C. V. Thompson
W. R. Fayad
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139
V. K. Andleigh
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139
C. V. Thompson
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139
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Abstract

We presented a model for the line-width-dependent grain structure statistics in bamboo interconnects. We then showed, using an electromigration simulation, that grain orientation-dependent interface diffusivities constitute a likely mechanism contributing to the variabilities in lifetimes observed in experiments.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 2 , February 2001 , pp. 413 - 416
Copyright
Copyright © Materials Research Society 2001

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References

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