Hostname: page-component-8448b6f56d-gtxcr Total loading time: 0 Render date: 2024-04-23T11:31:58.067Z Has data issue: false hasContentIssue false

Metal incorporation in sputter-deposited MoS2 films studied by extended x-ray absorption fine structure

Published online by Cambridge University Press:  03 March 2011

Jeffrey R. Lince*
Affiliation:
Mechanics and Materials Technology Center, The Aerospace Corporation, 2350 East El Segundo Boulevard, El Segundo, California 90245
Michael R. Hilton
Affiliation:
Mechanics and Materials Technology Center, The Aerospace Corporation, 2350 East El Segundo Boulevard, El Segundo, California 90245
Arun S. Bommannavar
Affiliation:
EXXON Research & Engineering Co., EXXON PRT, Bldg. 510E, Brookhaven National Laboratory, Upton, New York 11973
*
a)Author to whom correspondence should be addressed.
Get access

Abstract

Solid lubricant films produced by cosputtering metals with MoS2 and by forming metal/MoS2 multilayers are being planned for use in the next generation of solid lubricated devices on spacecraft, including gimbal and sensor bearings, actuators, and sliding electrical contacts. The films exhibit increased densities and wear lives compared to films without additives, but the mechanism of density enhancement is not well understood. The extended x-ray absorption fine structure (EXAFS) technique is ideal for elucidating the structure of these poorly crystalline films. We analyzed MoS2 films cosputtered with 0, 2, and 10% Ni, as well as Ni/MoS2 and Au(Pd)/MoS2 multilayer films. The results obtained at the Mo-K absorption edge showed that the metal-containing films comprised predominantly the same nanocrystalline phases present in similar films without added metals: pure MoS2 and a MoS2−xOx phase. MoS2−xOx is isostructural with MoS2, with O atoms substituting for S atoms in the MoS2 crystal lattice. For all Ni-containing films, EXAFS data obtained at the Ni-K absorption edge showed that the Ni had not chemically reacted with the MoS2−xOx and MoS2, but formed a disordered NiOx phase. However, Ni-cosputtered films showed decreasing Mo-Mo bond lengths in the MoS2−xOx phase with increasing Ni content, probably due to preferential oxidation of Ni compared to MoS2. EXAFS of these Ni-cosputtcred films showed only a small decrease in short-range order with Ni content, while x-ray diffraction showed a concurrent large decrease in long-range order. The results indicate that film densification in Ni-cosputtered films is caused by NiOx formation at the edges of nucleating MoS2−xOx/MoS2 crystallites, limiting the crystallite size attainable within the films.

Type
Articles
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Spalvins, T., Thin Solid Films 118, 375 (1984).CrossRefGoogle Scholar
2Stupp, B. C., Thin Solid Films 84, 257 (1981).CrossRefGoogle Scholar
3Hilton, M. R. and Fleischauer, P. D., in New Materials Approaches to Tribology: Theory and Applications, edited by Pope, L. E., Fehrenbacher, L. L., and Winer, W. O. (Mater. Res. Soc. Symp. Proc. 140, Pittsburgh, PA, 1989), p. 227.Google Scholar
4Hilton, M. R., Bauer, R., Didziulis, S. V., Lince, J. R., and Fleischauer, P.D., Advances in Engineering Tribology, Chung, Y. W. and Cheng, H.S., eds. (ASLE SP-31, 1991), p. 31.Google Scholar
5Didziulis, S. V., Hilton, M. R., Bauer, R., and Fleischauer, P.D., Aerospace Report No. TOR-92(2064)-1, 15 October 1992.Google Scholar
6Hilton, M. R., Jayaram, G., and Marks, L.D., J. Mater. Res. (in press).Google Scholar
7Lince, J. R., Hilton, M. R., and Bommannavar, A.S., Thin Solid Films (in press).Google Scholar
8Lince, J. R., J. Mater. Res. 5, 218 (1990); see also Lince, J.R., J. Mater. Res. 5, 895(1990), (E).CrossRefGoogle Scholar
9Lince, J. R., Hilton, M. R., and Bommannavar, A. S., Surf. Coat. Technol. 43/44, 640 (1990).Google Scholar
10Cong, Q., Yu, D., Wang, J., and Ou, Y. J., Thin Solid Films 209, 1 (1992).CrossRefGoogle Scholar
11Pierce, D. E., Burns, R. P., Dauplaise, H. M., and Mizerka, L. J., Trib. Trans. 34, 205 (1991).CrossRefGoogle Scholar
12Jervis, T. R., Bauer, R., Nastasi, M., and Fleischauer, P. D., Thin Solid Films 181, 475 (1989).CrossRefGoogle Scholar
13Buck, V., Wear 114, 263 (1987).CrossRefGoogle Scholar
14Buck, V., Wear 91, 281 (1983).CrossRefGoogle Scholar
15Dimigen, H., Hubsch, H., Willich, P., and Reichelt, K., Thin Solid Films 129, 79 (1985).CrossRefGoogle Scholar
16Buck, V., Thin Solid Films 198, 157 (1991).CrossRefGoogle Scholar
17Martin, J. M., Donnet, C., Le Mogne, Th., and Epicier, Th., Phys. Rev. B 48, 10583 (1993).CrossRefGoogle Scholar
18Donnet, C., Le Mogne, Th., and Martin, J. M., Surf. Coat. Technol. 62, 406 (1993).CrossRefGoogle Scholar
19Fleischauer, P. D. and Bauer, R., Tribol. Trans. 31, 239 (1988).CrossRefGoogle Scholar
20Lince, J. R. and Fleischauer, P. D., J. Mater. Res. 2, 827 (1987).CrossRefGoogle Scholar
21Hilton, M. R. and Fleischauer, P. D., J. Mater. Res. 5, 406 (1990).CrossRefGoogle Scholar
22Hilton, M. R., Bauer, R., Didziulis, S. V., Dugger, M. T., Keem, J. M., and Scholhamer, J., Surf. Coat. Technol. 53, 13 (1992).CrossRefGoogle Scholar
23Seah, M. P., Dench, W. A., SIA, Surf. Interf. Anal. 1, 2 (1979); Tanuma, S., Powell, C. J., and Penn, D.R., Surf. Sci. 192, L849 (1987).CrossRefGoogle Scholar
24Sayers, D. E. and Bunker, B. A., in X-ray Absorption: Principles, Applications, Techniques ofEXAFS, SEXAFS, and XANES, edited by Konigsberger, D.C. and Prins, R. (Chemical Analysis, v. 92, Wiley and Sons, New York, 1988), Chap. 6.Google Scholar
25Cook, J. W. Jr. and Sayers, D. E., J. Appl. Phys. 52, 5024 (1981).CrossRefGoogle Scholar
26Powder Diffraction File, Joint Committee on Powder Diffraction Standards, Int. Center for Diffraction Data, Swarthmore, PA, 1980.Google Scholar
27Structure Reports, edited by Pearson, W. B. (Int. Union of Cryst, Utrecht, 1964), Vol. 29.Google Scholar
28Moser, J. and Levy, F., J. Mater. Res. 8, 206 (1993).CrossRefGoogle Scholar
29Welton Cook, M.R. and Prutton, M., J. Phys. C 13, 3993 (1980).CrossRefGoogle Scholar
30Moser, J., Liao, J., and Levy, F., J. Phys. D 23, 624 (1990).CrossRefGoogle Scholar