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Investigating point defects in irradiated boron-doped diamond films by temperature-dependent electrical properties and scanning tunneling microscopy and spectroscopy

Published online by Cambridge University Press:  31 January 2011

Sanju Gupta ,
John Farmer ,
Dario Daghero  and
Renato Gonnelli
Sanju Gupta*
Affiliation:
Department of Physics, C.so Duca degli Abruzzi 24, Politecnico di Torino, Italy 10129; and Missouri University Research Reactor, University of Missouri-Columbia, Columbia, Missouri 65211
John Farmer
Affiliation:
Missouri University Research Reactor, and Department of Physics, University of Missouri–Columbia, Columbia, Missouri 65211
Renato Gonnelli
Affiliation:
Department of Physics, C.so Duca degli Abruzzi 24, Politecnico di Torino, Italy 10129
*
a)Address all correspondence to this author. e-mail: sgup@rocketmail.com
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Abstract

We report temperature-dependent electrical resistivity (or dc conductivity, σdc) down to 4 K for pristine and gamma-irradiated microwave plasma-assisted chemical vapor-deposited boron-doped diamond films with [B]/[C]gas = 4000 ppm to gain insights into the nature of conduction mechanism, distribution, and kinetics of point defects generated due to gamma irradiation prompted by the article [Gupta et al., J. Mater. Res.24, 1498 (2009)]. The pristine samples exhibit typical metallic conduction up to 50 K and with reduction in temperature to 25 K, the σdc decreases monotonically followed by saturation at 4 K, suggesting “disordered” metal or “localized” behavior. For irradiated films, continuous increasing resistivity with decreasing temperature demonstrates semiconducting behavior with thermal activation/hopping conduction phenomena. It is intriguing to propose that irradiation leads to substantial hydrogen redistribution leading to unexpected low-temperature resistivity behavior. Scanning tunneling microscopy/spectroscopy helped to illustrate local grain and grain boundary effects.

Keywords

DiamondElectrical propertiesScanning tunneling microscopy (STM)
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 3 , March 2010 , pp. 444 - 457
Copyright
Copyright © Materials Research Society 2010

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