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Intrinsic stress effects on the growth of planar SiO2 films

Published online by Cambridge University Press:  31 January 2011

T. J. Delph  and
M-T. Lin
T. J. Delph
Affiliation:
Department of Mechanical Engineering and Mechanics, Lehigh University, Bethlehem, Pennsylvania 18015
M-T. Lin
Affiliation:
Department of Mechanical Engineering and Mechanics, Lehigh University, Bethlehem, Pennsylvania 18015
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Abstract

We report here on the results of a numerical study on the effects of intrinsic stress on the growth of SiO2 thin films. In accordance with a widely accepted model of stress effects upon silicon oxidation, we assume that the intrinsic stress affects only the oxidant diffusion rate. We examine several different models of stress-assisted diffusion. In the first of these models, the diffusivity is taken to be an exponential function of the stress, whereas in the second, the stress gradient appears as an additional term in the standard diffusion equation. Intrinsic stress effects result in deviations of up to 18% in expected layer thickness, depending upon the mode of oxidation and the diffusion model adopted. The implications of these results for the measurement of diffusion coefficients in SiO2 films are discussed.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 12 , December 1999 , pp. 4508 - 4513
Copyright
Copyright © Materials Research Society 1999

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