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Gas-source molecular beam epitaxy of monocrystalline β–SiC on vicinal α(6H)–SiC

Published online by Cambridge University Press:  03 March 2011

L.B. Rowland ,
R.S. Kern ,
S. Tanaka  and
Robert F. Davis
L.B. Rowland
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907
R.S. Kern
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907
S. Tanaka
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907
Robert F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907
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Abstract

Single-crystal epitaxial films of cubic β(3C)–SiC(111) have been deposited on hexagonal α(6H)–SiC(0001) substrates oriented 3–4° toward [1120] at 1050–1250 °C via gas-source molecular beam epitaxy using disilane (Si2H6) and ethylene (C2H4). High-resolution transmission electron microscopy revealed that the nucleation and growth of the β(3C)–SiC regions occurred primarily on terraces between closely spaced steps because of reduced rates of surface migration at the low growth temperatures. Double positioning boundaries were observed at the intersections of these regions.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 8 , Issue 11 , November 1993 , pp. 2753 - 2756
Copyright
Copyright © Materials Research Society 1993

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References

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