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Epitaxial growth of skutterudite (CoSb3) thin films on (001) InSb by pulsed laser deposition

Published online by Cambridge University Press:  31 January 2011

J. C. Caylor ,
M. S. Sander ,
A. M. Stacy ,
J. S. Harper ,
R. Gronsky  and
T. Sands
J. C. Caylor
Affiliation:
Department of Chemistry, University of California, Berkeley, California 94720
M. S. Sander
Affiliation:
Department of Chemistry, University of California, Berkeley, California 94720
A. M. Stacy
Affiliation:
Department of Chemistry, University of California, Berkeley, California 94720
J. S. Harper
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, California 94720
R. Gronsky
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, California 94720
T. Sands*
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, California 94720
*
a)Address correspondence to this author.
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Abstract

Heteroepitaxial growth of the cubic skutterudite phase CoSb3 on (001) InSb substrates was achieved by pulsed laser deposition using a substrate temperature of 270 °C and a bulk CoSb3 target with 0.75 at.% excess Sb. An InSb (a0 = 4 0.6478 nm) substrate was chosen for its lattice registry with the antimonide skutterudites (e.g., CoSb3 with a = 0 4 0.9034 nm) on the basis of a presumed 45° rotated relationship with the InSb zinc blende structure. X-ray diffraction and transmission electron microscopy confirmed both the structure of the films and their epitaxial relationship: (001)CoSb3 ∥ (001)InSb; [100]CoSb3 ∥ [110]InSb.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 16 , Issue 9 , September 2001 , pp. 2467 - 2470
Copyright
Copyright © Materials Research Society 2001

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