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Epitaxial growth of BaO and SrO with new crystal structures using mass-separated low-energy O+ beams

Published online by Cambridge University Press:  31 January 2011

Ryusuke Kita ,
Takashi Hase ,
Hiromi Takahashi ,
Kenichi Kawaguchi  and
Tadataka Morishita
Ryusuke Kita
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
Takashi Hase
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
Hiromi Takahashi
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
Kenichi Kawaguchi
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
Tadataka Morishita
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
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Abstract

The growth of BaO and SrO on SrTiO3(100) substrates using mass-separated low-energy (50 eV) O+ beams has been studied using x-ray diffraction, reflection high-energy electron diffraction, and high-resolution transmission electron microscopy. It was found that the BaO and SrO films have been epitaxially grown with new structures different from those of corresponding bulk crystals: The BaO films have a cubic structure with a lattice constant of 4.0 Å, and the SrO films have a tetragonal structure with a lattice constant of a = 3.7 Å parallel to the substrate and with c = 4.0 Å normal to the substrate.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 2 , February 1993 , pp. 321 - 323
Copyright
Copyright © Materials Research Society 1993

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References

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