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Effect of phosphorous content on phase transformation induced stress in Sn/Ni(P) thin films

Published online by Cambridge University Press:  03 March 2011

J.Y. Song  and
Jin Yu
J.Y. Song*
Affiliation:
Division of Advanced Technology, Korea Research Institute of Standards and Science, Yuseong-gu, Daejeon 305-600, South Korea
Jin Yu
Affiliation:
Center for Electronic Packaging Materials, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon 305-701, South Korea
*
a) Address all correspondence to this author. e-mail: jysong@kriss.re.kr
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Abstract

The film stress evolutions induced by the phase transformation of Sn/Ni(P) films during thermal treatment were investigated using an in situ measurement of wafer curvature by laser scanning. Apparently, tensile stress developed due to the layer-by-layer formation of Ni3Sn4 and Ni3P phases for Sn/Ni(11.7P) films, and a compressive stress evolved for Sn/Ni(3P) films, despite the same phase transformation. The molar volume mismatch and x-ray diffraction analyses before and after the reaction between Sn and Ni(P) films suggested that a compressive stress existed in the Ni3Sn4 layer while the Ni3P layer was under a tensile stress state. The apparent stress states (tensile or compressive) for overall thickness of the films formed by the layer-by-layer transformation in Sn/Ni(P) were determined by the competition between compressive stress related to Ni3Sn4 formation and tensile stress caused by Ni3P formation. The stress states were dependent upon the relative thickness of the product layers with varying P content.

Keywords

FilmLayeredPhase transformation
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 9 , September 2006 , pp. 2261 - 2269
Copyright
Copyright © Materials Research Society 2006

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