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Crystallization kinetics of sputter-deposited LaNiO3 thin films on Si substrate

Published online by Cambridge University Press:  31 January 2011

Hsin-Yi Lee  and
Tai-Bor Wu
Hsin-Yi Lee
Affiliation:
Research Division, Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan, Republic of China, and Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of China
Tai-Bor Wu
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of China
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Abstract

The kinetics of in situ crystallization of LaNiO3 thin films in sputtering deposition at temperatures ranging from 250 to 450 °C and isothermal crystallization of room-temperature (RT) sputtered LaNiO3 thin films in annealing at 350–500 °C were investigated by the x-ray diffraction method. The crystallization in both cases basically followed the Johnson–Mehl–Avrami (JMA) relation. However, different crystallization kinetics were observed. The transformation index and activation energy of crystallization in high temperature sputtering were about 1.5 and 33 kJ/mole, respectively, while in the annealing of RT-sputtered films, 1.0 and 63 kJ/mole were found. From the determined transformation index, it is suggested that the crystallization rate in high temperature sputtering was determined by a diffusion-controlled process of lateral growth with a decreasing nucleation rate of crystallites in the adsorption layer. However, the annealed films crystallized by an interface-controlled and one-dimensional growth of existing nuclei.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 8 , August 1998 , pp. 2291 - 2296
Copyright
Copyright © Materials Research Society 1998

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