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Creation of single oxygen vacancy on titanium dioxide surface

Published online by Cambridge University Press:  07 June 2012

Taketoshi Minato ,
Maki Kawai  and
Yousoo Kim
Taketoshi Minato*
Affiliation:
International Advanced Research and Education Organization, Tohoku University, 6-3 Aoba, Sendai 980-8598, Japan; and Surface and Interface Laboratory, RIKEN Advanced Science Institute, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Maki Kawai*
Affiliation:
Department of Advanced Materials Science, University of Tokyo, Kashiwa-shi 277-8561, Japan
Yousoo Kim*
Affiliation:
Surface and Interface Laboratory, RIKEN Advanced Science Institute, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
*
a)Address all correspondence to these authors. e-mail: minato@m.tohoku.ac.jp
b)e-mail: maki@k.u-tokyo.ac.jp
c)e-mail: ykim@riken.jp
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Abstract

Physical and chemical properties of solid materials are modified by introducing defects, which disarrange the atomic periodic structure. Typical example is oxygen vacancies on titanium dioxide (TiO2) surfaces. Oxygen vacancies on TiO2 surfaces provide new physical and chemical surface properties, such as conductivity, catalytic activity, hydrophilicity, etc. To date, annealing, electron-/photo-stimulated desorption, and chemical reaction have been reported to create oxygen vacancies on TiO2 surfaces. However, these techniques do not allow position control of the defects at the atomic scale. We report the creation of single oxygen vacancy using a scanning tunneling microscope (STM). This technique creates oxygen vacancy at desired site. In addition, based on the experimental findings, we discuss the mechanism of manipulating atomic defects using the STM.

Type
Articles
Information
Journal of Materials Research , Volume 27 , Issue 17: Focus Issue: Oxide Semiconductors , 14 September 2012 , pp. 2237 - 2240
Copyright
Copyright © Materials Research Society 2012

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