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Correlation of the resistive switching and polarization switching in zinc oxide thin films using scanning probe microscopy techniques

Published online by Cambridge University Press:  29 October 2015

Juanxiu Xiao ,
Kaiyang Zeng ,
Lai-Mun Wong  and
Shijie Wang
Juanxiu Xiao
Affiliation:
Department of Mechanical Engineering, National University of Singapore, 117576, Singapore
Kaiyang Zeng*
Affiliation:
Department of Mechanical Engineering, National University of Singapore, 117576, Singapore
Lai-Mun Wong
Affiliation:
Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 117602, Singapore
Shijie Wang
Affiliation:
Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 117602, Singapore
*
a)Address all correspondence to this author. e-mail: mpezk@nus.edu.sg
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Abstract

In this study, resistive switching (RS), polarization switching, and charge distribution under DC bias in undoped ZnO thin films are studied by applying scanning probe microscopy (SPM) techniques on the same location. The techniques include Piezoresponce Force Microscopy, Kelvin Probe Force Microscopy, and Conductive Atomic Force Microscopy. The effects of oxygen partial pressure during the film deposition are also investigated. The results show that high resistance state (HRS) is accompanied by the polarization switching and charges storage. By comparing the SPMs results from the same location, it is found that the oxygen partial pressure during film deposition is an important factor over the holes injection during the poling processes in the HRS. On the other hand, the low resistance state (LRS) may be dominated by the electrons injection. Based on these findings, the energy band diagrams in the Pt-tip/ZnO-film/Pt-bottom-electrode structure with the applications of the external biases are illustrated schematically. This study also proposes a more persuasive mechanism of RS in ZnO films.

Keywords

resistive switchingpolarization switchingsurface potentialZnO thin filmoxygen vacancyscanning probe microscopy
Type
Articles
Information
Journal of Materials Research , Volume 30 , Issue 22 , 27 November 2015 , pp. 3431 - 3442
Copyright
Copyright © Materials Research Society 2015 

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