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Continuous-wave InGaN laser diodes on copper and diamond substrates

Published online by Cambridge University Press:  31 January 2011

William S. Wong ,
Michael Kneissl ,
David W. Treat ,
Mark Teepe ,
Naoko Miyashita ,
Alberto Salleo  and
Noble M. Johnson
William S. Wong
Affiliation:
XEROX Palo Alto Research Center, Electronics Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, California 94304
Michael Kneissl
Affiliation:
XEROX Palo Alto Research Center, Electronics Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, California 94304
David W. Treat
Affiliation:
XEROX Palo Alto Research Center, Electronics Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, California 94304
Mark Teepe
Affiliation:
XEROX Palo Alto Research Center, Electronics Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, California 94304
Naoko Miyashita
Affiliation:
XEROX Palo Alto Research Center, Electronics Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, California 94304
Alberto Salleo
Affiliation:
XEROX Palo Alto Research Center, Electronics Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, California 94304
Noble M. Johnson
Affiliation:
XEROX Palo Alto Research Center, Electronics Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, California 94304
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Abstract

InGaN-based optoelectronics were integrated with dissimilar substrate materials using a novel thin-film laser lift-off (LLO) process. The LLO process was employed to integrate InGaN-based laser diodes (LDs) with Cu and diamond substrates. Separation of InGaN-based thin-film devices from their typical sapphire growth substrates was accomplished using a pulsed excimer laser in the ultraviolet regime incident through the transparent substrate. Characterization of the LDs before and after the sapphire substrate removal revealed no measurable degradation in device performance. Reduced threshold currents and increased differential quantum efficiences were measured for LDs on Cu due to a 50% reduction of the thermal impedence. Light output for LDs on Cu was two times greater than comparable LDs on sapphire with a maximum output of 100 mW. Increased light output for LDs on diamond was also measured with a maximum output of 80 mW.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 4 , April 2002 , pp. 890 - 894
Copyright
Copyright © Materials Research Society 2002

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