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Closed porosity aluminosilicate for electronic packaging applications

Published online by Cambridge University Press:  31 January 2011

S.L. Hietala ,
D.M. Smith ,
V.M. Hietala  and
C.J. Brinker
S.L. Hietala
Affiliation:
UNM/NSF Center for Micro-Engineered Ceramics, University of New Mexico, Albuquerque, New Mexico 87131-6041
D.M. Smith
Affiliation:
UNM/NSF Center for Micro-Engineered Ceramics, University of New Mexico, Albuquerque, New Mexico 87131-6041
V.M. Hietala
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
C.J. Brinker
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
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Abstract

The electrical properties of sol-gel prepared aluminosilicate films were investigated for suitability in electronic applications. The aluminosilicate films exhibited apparent closed porosity and a dielectric constant as low as ≍5 with processing temperatures from 373 K to 873 K. The porosity was inaccessible to nitrogen at 77 K, helium at 293 K, and water vapor at 293 K. Both bulk and thin-film samples were analyzed for hydroxyl and carbon contents to elucidate the relative dependence of the measured electrical properties on processing conditions. Experiments indicate it is possible to vary the porosity in bulk material in ways that should improve electrical properties.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 5 , May 1993 , pp. 1122 - 1127
Copyright
Copyright © Materials Research Society 1993

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References

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