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Characterization of tungsten-carbon layers deposited on stainless steel by reactive magnetron sputtering

Published online by Cambridge University Press:  31 January 2011

Y. Pauleau  and
Ph. Gouy-Pailler
Y. Pauleau*
Affiliation:
Centre d'Etudes Nucléaires de Grenoble, CEREM-DEM-SGS, 85X, 38041 Grenoble, France
Ph. Gouy-Pailler
Affiliation:
Centre d'Etudes Nucléaires de Grenoble, CEREM-DEM-SGS, 85X, 38041 Grenoble, France
*
a)Institut National Polytechnique de Grenoble, ENSEEG, B.P. 75, 38402 Saint Martin d'HèGres, France.
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Abstract

Tungsten-carbon coatings have been deposited on stainless steel substrates by reactive magnetron sputtering from Ar–CH4 mixtures. The carbon concentration in the coatings measured by electron microprobe analyses was found to be proportional to the CH4 flow rate. Only the cubic α–W phase with a dilated lattice parameter was identified in W–C coatings having a carbon content lower than 25 at. %. Since the lattice parameter of the α–W phase in these W–C coatings increased with increasing carbon content, these coatings may be assumed to be W–C solid solutions. Only the nonstoichiometric β–WC1−x carbide (cubic phase) was detected in W–C coatings containing 30 to 70 at. % of carbon. The chemical state of the elements was investigated by x-ray photoelectron spectroscopy. The Vickers hardness of the W–C coatings was found to be considerably dependent on the carbon concentration. A maximum microhardness of 26 000 MPa was measured for W–C coatings containing either 14–15 at. % or 40–45 at. % of carbon. The correlation between crystallographic structure and microhardness is analyzed and discussed in this paper.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 8 , August 1992 , pp. 2070 - 2079
Copyright
Copyright © Materials Research Society 1992

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References

1.Yee, K. K., Intern. Met. Rev. 23 (1), 19 (1978).CrossRefGoogle Scholar
2.Westwood, W. D., in Handbook of Plasma Processing Technology: Fundamentals, Etching, Deposition, and Surface Interactions, edited by Rossnagel, S. M., Cuomo, J. J., and Westwood, W. D. (Noyes Data Corp., Park Ridge, NJ, 1989), p. 233.Google Scholar
3.Srivastava, P. K., Rao, T. V., Vankar, V. D., and Chopra, K. L., J. Vac. Sci. Technol. A 2 (3), 1261 (1984).CrossRefGoogle Scholar
4.Srivastava, P. K., Vankar, V. D., and Chopra, K. L., J. Vac. Sci. Technol. A 3 (6), 2129 (1985).CrossRefGoogle Scholar
5.Srivastava, P. K., Vankar, V. D., and Chopra, K. L., Bull. Mater. Sci. 8 (3), 379 (1986).CrossRefGoogle Scholar
6.Srivastava, P. K., Vankar, V. D., and Chopra, K. L., J. Vac. Sci. Technol. A4, (6), 2819 (1986).CrossRefGoogle Scholar
7.Srivastava, P. K., Vankar, V. D., and Chopra, K. L., Thin Solid Films 161, 107 (1988).CrossRefGoogle Scholar
8.Fuchs, K., Rödhammer, P., Tschulik, A., Kailer, K., Weirather, R., Bertel, E., and Netzer, F. P., 11th International Plansee Seminar Cll, 207 (1985).Google Scholar
9.Fuchs, K., Rödhammer, P., Bertel, E., Netzer, F. P., and Gornik, E., Le Vide, Les Couches Minces 235 (suppl.), Vol. 2, 587 (1987).Google Scholar
10.van Duyn, W. and van, B.Lochem, Thin Solid Films 181, 497 (1989).CrossRefGoogle Scholar
11.Wickersham, C. E., Foster, E. L., and Stickford, G. H., J. Vac. Sci. Technol. 18 (2), 223 (1981).CrossRefGoogle Scholar
12.Machida, K., Enyo, M., and Toyoshima, I., Thin Solid Films 161, L91 (1988).CrossRefGoogle Scholar
13.Wagner, C. D., in Practical Surface Analysis, 2nd ed., Vol. 1 “Auger and X-ray Photoelectron Spectroscopy”, edited by Briggs, D. and Seah, M. P. (J. Wiley & Sons, New York, 1990), p. 595.Google Scholar
14.Cards, JCPDS Data, 4–806, International Center of Diffraction Data, Swarthmore, PA (1988).Google Scholar
15.Cards, JCPDS Data, 20–1316, International Center of Diffraction Data, Swarthmore, PA (1988).Google Scholar
16.Rudy, E., Windisch, S. T., and Hoffman, J. R., in Fundamentals of Refractory Compounds, edited by Hausner, H. H. and Bowman, M. G. (Plenum Press, New York, 1968), p. 37.Google Scholar
17.Haghiri-Gosnet, A. M., Ladan, F. R., Mayeux, C., Launois, H., and Jancour, M. C., J. Vac. Sci. Technol. A 7 (4), 2663 (1989).CrossRefGoogle Scholar
18.Dunlop, H., private communication.Google Scholar
19.Cavaleiro, A., Vieira, M. T., and Lemperiere, G., Thin Solid Films 185, 199 (1990).CrossRefGoogle Scholar
20.Colton, R. J. and Rabalais, J. W., Inorg. Chem. 15 (1), 236 (1976).CrossRefGoogle Scholar