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Characterization of NOx sensor using doped In2O3

Published online by Cambridge University Press:  31 January 2011

Shinichiro Tanaka  and
Takao Esaka
Shinichiro Tanaka
Affiliation:
Department of Materials Science, Faculty of Engineering, Tottori University, Minami, 4-101, Koyamacho, Tottori 680-0945, Japan
Takao Esaka*
Affiliation:
Department of Materials Science, Faculty of Engineering, Tottori University, Minami, 4-101, Koyamacho, Tottori 680-0945, Japan
*
a)Address all correspondence to this author. e-mial: esaka@chem.tottori-u.ac.jp
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Abstract

To develop a highly sensitive gas sensor monitoring NOx, various kinds of n-type semiconductors made of In2O3 were prepared, and the relations between doped elements and gas sensitivities or response times were studied. Consequently, it was found that the samples doped with less than 1 at.% alkali-earth metal components have high sensitivities and responsiveness. The gas-absorbing phenomena were investigated using highly sensitive thermal analysis. From the result, it was indicated that alkali-earth component-doped In2O3 materials have higher adsorption ability of NOx than pure In2O3 has.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 5 , May 2001 , pp. 1389 - 1395
Copyright
Copyright © Materials Research Society 2001

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References

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