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Two-stage plasma nitridation approach for rapidly synthesizing aluminum nitride powders

Published online by Cambridge University Press:  18 January 2017

Mei-Chen Sung ,
Yi-Ming Kuo ,
Lien-Te Hsieh  and
Cheng-Hsien Tsai
Mei-Chen Sung
Affiliation:
Department of Chemical and Materials Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan
Yi-Ming Kuo
Affiliation:
Department of Environmental and Safety Engineering, Chung Hwa College of Medical Technology, Tainan 717, Taiwan
Lien-Te Hsieh
Affiliation:
Department of Environmental Engineering and Science, National Pingtung University of Science and Technology, Pingtung 912, Taiwan
Cheng-Hsien Tsai*
Affiliation:
Department of Chemical and Materials Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan
*
a) Address all correspondence to this author. e-mail: chtsai@kuas.edu.tw
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Abstract

The synthesis of aluminum nitride (AlN) powders from aluminum (Al) particles via a thermal nitridation process was carried out at high temperature (>900 °C) with a long reaction time (∼several hours). This study proposes a two-stage plasma-chemical synthesis process to efficiently minimize the agglomeration of Al particles, reduce the reaction time and temperature, and promote the formation of AlN powders. In the first stage, partially nitrided Al powders were produced at temperatures lower than 600 °C in atmospheric-pressure microwave N2 plasma. The particle size of the as-prepared powders was similar to that of the original Al powders. In the second stage, the reaction temperature was increased to 700–800 °C and the reaction time was less than 5 min in N2 plasma. Well-dispersed AlN powders with almost no agglomeration were produced. Moreover, the particle size was lower than that of the original Al.

Keywords

dischargealuminum nitridenitridationsynthesis
Type
Articles
Information
Journal of Materials Research , Volume 32 , Issue 7 , 14 April 2017 , pp. 1279 - 1286
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Copyright
Copyright © Materials Research Society 2017 

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Footnotes

Contributing Editor: Yanchun Zhou

References

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