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Tensile Creep Behavior in Lutetia-doped Silicon Nitride Ceramics

Published online by Cambridge University Press:  01 August 2005

Toshiyuki Nishimura
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Naoto Hirosaki
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Yoshinobu Yamamoto
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Yorinobu Takigawa
Affiliation:
Japan Fine Ceramics Center, Nagoya, Aichi 456-8587, Japan
Jian-Wu Cao
Affiliation:
Japan Fine Ceramics Center, Nagoya, Aichi 456-8587, Japan
Corresponding
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Abstract

We studied tensile creep behavior in two silicon nitride ceramics, i.e., 4.8 mol% Lu2O3 (SN48) and 1.2 mol% Lu2O3 (SN12), at 1400–1500 °C under applied stress of 137–300 MPa. Time to failure of SN48 increased with decreasing applied stress and minimum strain rate. The stress–rupture parameter was 10.7 at 1400 °C and 11.4 at 1500 °C. Pore formation was confirmed in a creep-tested specimen of SN48 by transmission electron microscopy. These results suggest that SN48 was fractured by creep rupture. The minimum strain rate of SN12 was almost below the measurement system limitation at temperatures below 1500 °C. Time to failure tended to increase with decreasing applied stress. The stress–rupture parameter was 41 at 1400 °C and 73 at 1500 °C. These results suggest that SN12 was fractured by subcritical crack growth.

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Copyright
Copyright © Materials Research Society 2005

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References

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