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Positive Hall coefficients obtained from contact misplacement on evident n-type ZnO films and crystals

Published online by Cambridge University Press:  31 January 2011

Takeshi Ohgaki
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Naoki Ohashi
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Shigeaki Sugimura
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Haruki Ryoken
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Isao Sakaguchi
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Yutaka Adachi
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Hajime Haneda
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Corresponding
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Abstract

We report on the effect of sample non-uniformity on the results of Hall-effect measurements. False positive Hall coefficients were obtained from an evidently n-type ZnO single crystal, although four electrodes with low contact resistance were made and the Van der Pauw parameter for this electrode configuration was close to 1.00. Further position-sensitive characterization revealed that the false positive Hall coefficient was due to non-uniform electrical properties of the sample. To demonstrate a false positive sign of the Hall coefficient due to sample non-uniformity, we devised a model structure made from evident n-type ZnO thin film and successfully reproduced a false positive Hall coefficient from n-type ZnO.

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Rapid Communications
Copyright
Copyright © Materials Research Society 2008

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References

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Positive Hall coefficients obtained from contact misplacement on evident n-type ZnO films and crystals
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