Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-12-05T05:05:23.604Z Has data issue: false hasContentIssue false

Optical properties of chemical-vapor-deposited diamond films

Published online by Cambridge University Press:  31 January 2011

Xiang Xin Bi
Affiliation:
Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506
P.C. Eklund
Affiliation:
Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506
J.G. Zhang
Affiliation:
Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506
A.M. Rao
Affiliation:
Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506
T.A. Perry
Affiliation:
Physics Department, General Motors Research Laboratory, Warren, Michigan 48090-9055
C.P. Beetz Jr.
Affiliation:
Physics Department, General Motors Research Laboratory, Warren, Michigan 48090-9055
Get access

Abstract

Results of room-temperature optical studies on ∼10 micron thick, free-standing diamond films are reported. The films were grown on Si(100) substrates by hot filament-assisted chemical vapor deposition (CVD) from a methane/hydrogen mixture. The as-grown, free surface of the films exhibited a surface roughness of scale σ ∼ 0.2 to 5 microns, depending on the methane/hydrogen mixture, which introduces significant optical scattering loss for frequencies greater than 0.5 eV. Specular reflection and transmission spectra in the range 0.01–10 eV were collected. Below the threshold for interband adsorption near ∼5 eV, the films studied behaved approximately as thin parallel plates of refractive index 2.4, with the rough free surface leading to increasingly larger loss of specular transmission/reflection with decreasing wavelength. Structure in the mid-infrared transmission spectra was observed and attributed to disorder-induced one-phonon absorption, intrinsic multi-phonon absorption, and infrared active –C–H2 stretching modes. The strength of the C–H band was observed to increase with increasing methane pressure in the growth chamber. At 5.3 eV, the onset of interband absorption was observed, in good agreement with the value of the indirect bandgap in type IIa (intrinsic) diamond.

Type
Articles
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Walker, J., Repts. Prog. Phys. 42, 108 (1979).CrossRefGoogle Scholar
2Matsumoto, S., Sato, Y., Tsutsumi, M., and Setaka, N., Mater, J.. Sci. 17, 3106 (1982).Google Scholar
3Matsumoto, S., Sato, Y., Tsutsumi, M., and Setaka, N., Jpn. J. Appl. Phys. 21, L183 (1982).CrossRefGoogle Scholar
4Angus, J. C. and Hayman, C. C., Science 241, 913 (1988).CrossRefGoogle Scholar
5Spear, K. E., J. Am. Ceram. Soc. 72, 171 (1989).CrossRefGoogle Scholar
6Beetz, C.P., Cooper, C.V., and Perry, T.A., Extended Abstracts, 19th Biennial Conf. on Carbon, 436 (June 1989).Google Scholar
7Beetz, C. P., Jr. and Perry, T. A., General Motors Research Publication GMR-6093, 1987.Google Scholar
8Belton, D. N., Harris, S. J., Schmeig, S. J., Weiner, A. M., and Perry, T. A., Appl. Phys. Lett. 54, 416 (1989).CrossRefGoogle Scholar
9Villars, P. and Calvert, L. D., Pearson's Handbook of Crystallographic Data for Intermetallic Phases (ASM, Metals Park, OH, 1985), Vol. 2, p. 1500.Google Scholar
10Hoffman, D. M., Doll, G. L., and Eklund, P. C., Phys. Rev. B 30, 6051 (1984).CrossRefGoogle Scholar
11Rao, A.M., Ph.D. Thesis, University of Kentucky, 1989, unpublished research.Google Scholar
12Edwards, D. F. and Phillip, H. R., in Handbook of Optical Constants of Solids, edited by Palik, E. D. (Academic Press, Orlando, FL, 1985), p. 665.Google Scholar
13Born, M. and Wolf, E., Principles of Optics (Pergamon Press, New York, 1970), p. 325.Google Scholar
14Bennett, H. E. and Bennett, J. M., in Physics of Thin Films, edited by Hass, G. and Thun, R. E. (Academic Press, New York and London, 1967), p. 1.Google Scholar
15Phillip, H. R. and Taft, E. A., Phys. Rev. 136, A1445 (1964).CrossRefGoogle Scholar
16Clark, C. D., Dean, P. J., and Harris, P.V., Proc. Royal Soc. A 277, 312 (1964). J. F. H. Custers and F. A. Raal, Nature 179, 268 (1957).Google Scholar
17McRae, E., Ren, S. L., and Eklund, P. C. (private communication).Google Scholar
18Pankove, J. I., Optical Processes in Semiconductors (Dover Publications, Inc., New York, 1975), p. 43.Google Scholar
19Lax, M. and Burstein, E., Phys. Rev. 97, 39 (1955).CrossRefGoogle Scholar
20Perry, T. A. and Beetz, C. P., in Raman and Photoluminescence Spectroscopies in Technology, edited by F. Adarand and J. E. Griffiths, Proc. SPIE 1055, 152 (1989).Google Scholar
21Wild, Ch., Herres, N., Wagner, J., Koidl, P., and Anthony, T. R., Extended Abs. Electrochemical Soc. Mtg., Los Angeles, CA, 89–1, 140 (May 1989).Google Scholar
22Kobashi, K., Nishimura, K., Miyata, K., Kawate, Y., Glass, J.T., and Williams, B. E., in Diamond Optics, edited by Feldman, A. and Holly, S., Proc. SPIE 969, 159 (1989).CrossRefGoogle Scholar
23Bellamy, L. J., The Infra-red Spectra of Complex Molecules (Chapman and Hall, London, 1975), p. 13.Google Scholar
24Perry, T. A. and Beetz, C.P., Jr., General Motors Research Publication GMR-6370 (1988).Google Scholar