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Negative Transverse Magnetoresistance of Boron-doped Graphite at Liquid-nitrogen Temperature in Relation to 3D Weak Localization

Published online by Cambridge University Press:  31 January 2011

Y. Hishiyama
Affiliation:
Faculty of Engineering, Musashi Institute of Technology, Stagaya-ku, Tokyo 158–8557, Japan
T. Matustani
Affiliation:
Faculty of Engineering, Musashi Institute of Technology, Stagaya-ku, Tokyo 158–8557, Japan
M. Suzuki
Affiliation:
Faculty of Engineering, Musashi Institute of Technology, Stagaya-ku, Tokyo 158–8557, Japan
Y. Kaburagi
Affiliation:
Faculty of Engineering, Musashi Institute of Technology, Stagaya-ku, Tokyo 158–8557, Japan
K. Sugihara
Affiliation:
College of Pharmacy, Nihon University, 7–7-1 Narashinodai, Funabashi, 274–8555, Japan
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Abstract

The negative transverse magnetoresistance of boron-doped graphite at liquid-nitrogen temperature has been studied in detail using 3000 °C-treated Grafoil(commercially available graphite foil), with the measurements of interlayer spacingd002 at room temperature, the Hall coefficient and electrical resistivity at liquid-nitrogen temperature, and temperature dependence of the resistivity in a temperature range 1.7–273 K. The negative transverse magnetoresistance can be measured for the specimens with hole carriers having the Fermi energy lower than −0.07 eV, estimatedby the Slonczewski–Weiss–McCure (SWMcC) band model using the Hall coefficient data. Characteristic feature of the negative transverse magnetoresistance has been investigated in terms of the SWMcC band model and a weak localization theory obtained by extending Kawabata's theory.

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Copyright
Copyright © Materials Research Society 2002

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Negative Transverse Magnetoresistance of Boron-doped Graphite at Liquid-nitrogen Temperature in Relation to 3D Weak Localization
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