Hostname: page-component-cc8bf7c57-xrnlw Total loading time: 0 Render date: 2024-12-12T03:02:31.873Z Has data issue: false hasContentIssue false

Microstructure of TiN films and interfaces formed by ion-beam-enhanced deposition and simple physical vapor deposition

Published online by Cambridge University Press:  03 March 2011

Z.Y. Cheng
Affiliation:
Central Iron and Steel Research Institute, Beijing 100081, China
Jing Zhu
Affiliation:
Central Iron and Steel Research Institute, Beijing 100081, China
X.H. Liu
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Xi Wang
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
G.Q. Yang
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Get access

Abstract

The microstructure and composition of TiN films, formed by ion beam enhanced deposition (IBED) with different energy (40 keV and 90 keV) xenon ion bombardment and by simple physical vapor deposition (hereafter S-PVD) without any ion beam enhancement, and the interfaces between TiN films and Si substrates have been studied by cross-sectional view analytical electron microscopy in this work. Both the IBED TiN films prepared by Xe+ bombardment with either 40 keV or 90 keV energy ions and the S-PVD TiN film consist of nanocrystals. The TEM observations in the S-PVD case reveal an amorphous layer and a mixed layer of TiN grains and amorphous material at the TiN/Si interface. The thicknesses of the amorphous layer and the mixed layer are about 210 nm and at least 40 nm, respectively. Upon 40 keV Xe+ bombardment, an amorphous Si transition layer of about 50 nm thickness is found at the TiN/Si interface, and the TiN grains close to the TiN/Si interface are of weak preferred orientation. Upon 90 keV Xe+ bombardment, amorphous TiN and Si layers are found with a total thickness of 80 nm at the TiN/Si interface, and the TiN grains near the TiN/Si interface are of preferred orientation [111]TiN ‖ [001]Si. The energy of xenon ion bombardment has a strong effect on the microstructural characteristics of TiN films and the interfaces between the TiN films and the Si substrates, as well as the size and the preferred orientation of TiN grains.

Type
Articles
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Kant, R. A. and Sartwell, B. D., Mater. Sci. Eng. 90, 357 (1987).CrossRefGoogle Scholar
2Zhou, J. K., Liu, X. H., Chen, Y. S., Wang, X., Zheng, Z. H., Huang, W., and Zou, S. C., Acta Metall. Sinica (English Edition) B3, 345 (1990).Google Scholar
3Wang, X., Yang, G. Q., Liu, X. H., Zheng, Z. H., Huang, W., Zhou, Z. Y., and Zou, S. C., Acta Metall. Sinica (Chinese Edition) B28, 133 (1992).Google Scholar
4Liu, X. H., Xue, B., Zheng, Z. H., Zhou, Z. Y., and Zou, S. C., Nucl. Instrum. Methods B39, 185 (1989).Google Scholar
5Zhu, J., Lin, X. W., Guo, W., Jia, L. P., Zhao, X. R., Zhang, J. Y., and Liu, C.L., Acta Metall. Sinica (English Edition) B6, 239 (1993).Google Scholar
6Hirsch, P., Howie, A., Nicholson, R. B., Pashley, D. W., and Whelan, M. J., Electron Microscopy of Thin Crystals, 2nd ed. (Roberte. Kneger Publishing Company, Malabar, FL, 1977), p. 116.Google Scholar