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Formation of hexagonal phase of TbMnO3 thin film and its multiferroic properties

Published online by Cambridge University Press:  31 January 2011

Jung-Hyuk Lee
Affiliation:
Research Center for Oxide Electronics (ReCOE) & Frontier Physics and Research Division (FPRD), School of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
Daesu Lee
Affiliation:
Research Center for Oxide Electronics (ReCOE) & Frontier Physics and Research Division (FPRD), School of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
Tae Won Noh*
Affiliation:
Research Center for Oxide Electronics (ReCOE) & Frontier Physics and Research Division (FPRD), School of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
Pattukkannu Murugavel
Affiliation:
Department of Physics, Indian Institute of Technology-Madras, Chennai 600-036, India
Jae Wook Kim
Affiliation:
Center for Strongly Correlated Materials Research (CSCMR) & Frontier Physics and Research Division (FPRD), School of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
Kee Hoon Kim
Affiliation:
Center for Strongly Correlated Materials Research (CSCMR) & Frontier Physics and Research Division (FPRD), School of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
Younghun Jo
Affiliation:
Quantum Materials Research Team, Korea Basic Science Institute, Daejeon 305-333, Korea
Myung-Hwa Jung
Affiliation:
Quantum Materials Research Team, Korea Basic Science Institute, Daejeon 305-333, Korea
Jong-Gul Yoon
Affiliation:
Department of Physics, University of Suwon, Suwon Gyunggi-do 445-743, Korea
Jin-Seok Chung
Affiliation:
Department of Physics and CAMDRC, Soongsil University, Seoul 156-743, Korea
*
a)Address all correspondence to this author. e-mail: twnoh@snu.ac.kr
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Abstract

TbMnO3 exists in an orthorhombic phase in nature. Recently, we successfully grew TbMnO3 thin films in the hexagonal phase using epitaxial stabilization techniques. In this article, we will show the details of the deposition conditions that allow us to fabricate the hexagonal TbMnO3 films on Pt–Al2O3(0001) substrates. The artificial hexagonal phase can be easily formed above 850 °C, irrespective of the oxygen partial pressure. The hexagonal TbMnO3 films showed ferroelectric properties, which are significantly enhanced compared to those of the orthorhombic TbMnO3 bulk phase. We find interesting anomalies in the magnetic and magnetodielectric properties of the TbMnO3 films at around 45 K, which should be related with the Mn3+ spin reorientation. We also find spin-glass-like behaviors in the magnetic susceptibility, which could be attributed to the geometric frustration of antiferromagnetically coupled Mn spins with an edge-sharing triangular lattice. This work shows details of the growth and properties of hexagonal TbMnO3 films.

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Articles
Copyright
Copyright © Materials Research Society 2007

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References

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