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Epitaxial growth, dielectric response, and microstructure of compositionally graded (Ba,Sr)TiO3 thin films grown on (100) MgO substrates by pulsed laser deposition

Published online by Cambridge University Press:  31 January 2011

Xinhua Zhu
Affiliation:
National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
Jianmin Zhu
Affiliation:
National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
Shunhua Zhou
Affiliation:
National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
Zhiguo Liu
Affiliation:
National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
Naiben Ming
Affiliation:
National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
Helen Lai-Wah Chan
Affiliation:
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
Chung-Loong Choy
Affiliation:
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
Kin-hung Wong
Affiliation:
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
Corresponding
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Abstract

Compositionally graded (Ba1−xSrx)TiO3 (BST) thin films (with 0.0 ⩽ x ⩽ 0.25) were grown by pulsed laser deposition on the (100)MgO single-crystal substrates covered with a conductive La0.5Sr0.5CoO3 (LSCO) layer as a bottom electrode. Their epitaxial growth, dielectric response, and microstructure were characterized. The epitaxial relationships between the BST, LSCO, and MgO can be determined as [001]BST//[001]LSCO//[001]MgO and (100)BST//(100)LSCO//(100)MgO, from the x-ray diffraction (rocking curve, ϕ scans) and electron-diffraction patterns. Dielectric data showed that the room temperature values of the dielectric constant and dielectric loss of the graded BST films were 630 and 0.017 at 100 kHz, respectively. Cross-sectional transmission electron microscopy (TEM) images reveal that both the BST films and the LSCO bottom electrode grow with a columnar structure, and they have flat interfaces and overall uniform thickness across the entire specimen. Cross-sectional high-resolution TEM images reveal that at the LSCO/MgO(100) interface, an interfacial reaction is not seen, whereas edge-type interfacial dislocations with their extra half-planes residing in the LSCO side are observed with an average interval of 2.20 nm, close to the theoretical value of 2.15 nm. At/near the LSCO/BST interface, the graded BST films grow perfectly and coherently on the LSCO lattice because they have the same type of crystal structure and almost same lattice constants, and no interfacial dislocations are observed. Planar TEM images show that the graded films exhibit granular and/or polyhedral morphologies with an average grain size of 50 nm, and the aligned rectangular-shaped voids were also observed. High-resolution TEM images show that the length sizes of voids vary from 8 to 15 nm, and with width of 5 to 10 nm along the 〈001〉 direction in the (100) plane.

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Copyright © Materials Research Society 2008

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References

1Scott, J.F.: High-dielectric constant thin films for dynamic random access memories (DRAM). Ann. Rev. Mater. Sci. 28, 79 1998CrossRefGoogle Scholar
2Dietz, G.W., Schumacher, M., Waser, R., Streiffer, S.K., Basceri, C., Kingon, A.I.: Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories. J. Appl. Phys. 82, 2359 1997CrossRefGoogle Scholar
3Jones, R.E.: Integration of ferroelectric nonvolatile memories. Solid State Technol. 40, 201 1997Google Scholar
4Maria, J.P., Trolier-McKinstry, S., Schlom, D.G.ISAF’96: Proceedings of the 10th IEEE International Symposium on Applications of Ferroelectrics, Vol. 1, IEEE Ultrasonics Ferroelectrics, and Frequency Control Society 1996 333CrossRefGoogle Scholar
5Zhu, X.H., Zhu, J.M., Zhou, S.H., Liu, Z.G., Ming, N.B., Lu, S.G., Chan, H.L.W., Choy, C.L.: Recent progress of (Ba,Sr)TiO3 thin films for tunable microwave devices. J. Electron. Mater. 32, 1125 2003CrossRefGoogle Scholar
6Hoerman, B.H., Ford, G.M., Kaufmann, L.D., Wessels, B.W.: Dielectric properties of epitaxial BaTiO3 thin films. Appl. Phys. Lett. 73, 2248 1998CrossRefGoogle Scholar
7Kim, W.J., Wu, H.D., Chang, W., Qadri, S.B., Pond, J.M., Kirchoefer, S.W., Chrisey, D.B., Horwitz, J.S.: Microwave dielectric properties of strained (Ba0.4Sr0.6)TiO3 thin films. J. Appl. Phys. 88, 5448 2000CrossRefGoogle Scholar
8Carlson, C.M., Rivkin, T.V., Parilla, P.A., Perkins, J.D., Ginley, D.S., Kozyrev, A.B., Oshadchy, V.N., Pavlov, A.S.: Large dielectric constant (ϵ/ϵ0 > 6000) Ba0.4Sr0.6TiO3 thin films for high-performance microwave phase shifters. Appl. Phys. Lett. 76, 1920 2000CrossRefGoogle Scholar
9Chang, W., Horwitz, J.S., Carter, A.C., Pond, J.M., Kirchoefer, S.W., Gilmore, C.M., Chrisey, D.B.: The effect of annealing on the microwave properties of Ba0.5Sr0.5TiO3 thin films. Appl. Phys. Lett. 74, 1033 1999CrossRefGoogle Scholar
10Park, B.H., Peterson, E.J., Jia, Q.X., Lee, J., Zeng, X., Si, W., Xi, X.X.: Effects of very thin strain layers on dielectric properties of epitaxial Ba0.6Sr0.4TiO3 films. Appl. Phys. Lett. 78, 533 2001CrossRefGoogle Scholar
11Cava, R.J.: Dielectric materials for applications in microwave communications. J. Mater. Chem. 11, 54 2001CrossRefGoogle Scholar
12Cole, M.W., Joshi, P.C., Ervin, M.H.: La doped Ba1−xSrxTiO3 thin films for tunable device applications. J. Appl. Phys. 89, 6336 2001CrossRefGoogle Scholar
13Chen, C.L., Shen, J., Chen, S.Y., Luo, G.P., Chu, C.W., Miranda, F.A., Van Keuls, F.W., Jiang, J.C., Meletis, E.I., Chang, H.Y.: Epitaxial growth of dielectric Ba0.6Sr0.4TiO3 thin film on MgO for room temperature microwave phase shifters. Appl. Phys. Lett. 78, 652 2001CrossRefGoogle Scholar
14Canedy, C.L., Li, H., Alpay, S.P., Salamanca-Riba, L., Roytburd, A.L., Ramesh, R.: Dielectric properties in heteroepitaxial Ba0.6Sr0.4TiO3 thin films: Effect of internal stresses and dislocationtype defects. Appl. Phys. Lett. 77, 1695 2000CrossRefGoogle Scholar
15Cole, M.W., Nothwang, W.D., Hubbard, C., Ngo, E., Ervin, M.: Low-dielectric loss and enhanced tunability of Ba0.6Sr0.4TiO3 based thin films via material compositional design and optimized film processing methods. J. Appl. Phys. 93, 9218 2003CrossRefGoogle Scholar
16Bubb, D.M., Horwitz, J.S., Qadri, S.B., Kirchoefer, S.W., Hubert, C., Levy, J.: (Ba,Sr)TiO3 thin films grown by pulsed laser deposition with low-dielectric loss at microwave frequencies. Appl. Phys. A 79, 99 2004CrossRefGoogle Scholar
17Auciello, O., Saha, S., Kaufman, D.Y., Streiffer, S.K., Fan, W., Kabius, B., Im, J., Baumann, P.: Science and technology of high-dielectric constant thin films and materials integration for application to high frequency devices. J. Electroceram. 12, 119 2004CrossRefGoogle Scholar
18Zhang, S., Alpay, S.P., Cole, M.M., Ngo, E., Hirsch, S., Demaree, J.D.: High tunable and temperature insensitive multiplayer barium titanate films. Appl. Phys. Lett. 90, 092901-1 2007Google Scholar
19Dimos, D., Muller, C.H.: Perovskite thin films for high-frequency capacitor applications. Ann. Rev. Mater. Sci. 28, 397 1998CrossRefGoogle Scholar
20Chang, W., Horwitz, J.S., Carter, A.C., Pond, J.M., Kirchoefer, S.W., Gilmore, C.M., Chrisey, D.B.: The effect of annealing on the microwave properties of Ba0.5Sr0.5TiO3 thin films. Appl. Phys. Lett. 74, 1033 1999CrossRefGoogle Scholar
21Desu, S.B.: Influence of stresses on the properties of ferroelectric BaTiO3 thin films. J. Electrochem. Soc. 140, 2981 1993CrossRefGoogle Scholar
22Shaw, T.M., Suo, Z., Huang, M., Liniger, E., Laibowitz, R.B., Baniecki, J.D.: The effect of stress on the dielectric properties of barium strontium titanate thin films. Appl. Phys. Lett. 75, 2129 1999CrossRefGoogle Scholar
23Chang, W., Gilmore, C.M., Kim, W.J., Pond, J.M., Kirchoefer, S.W., Qadri, S.B., Chirsey, D.B., Horwitz, J.S.: Influence of strain on microwave dielectric properties of (Ba,Sr)TiO3 thin films. J. Appl. Phys. 87, 3044 2000CrossRefGoogle Scholar
24Horwitz, J.S., Chang, W.T., Kim, W., Qadri, S.B., Pond, J.M., Kirchoefer, S.W., Chrisey, D.B.: The effect of stress on the microwave dielectric properties of Ba0.5Sr0.5TiO3 thin films. J. Electroceram. 4, 357 2000CrossRefGoogle Scholar
25Li, H., Roytburd, A.L., Alpay, S.P., Tran, T.D., Salamanca-Riba, L., Ramesh, R.: Dependence of dielectric properties on internal stresses in epitaxial barium strontium titanate thin films. Appl. Phys. Lett. 78, 2354 2001CrossRefGoogle Scholar
26Ban, Z.G., Alpay, S.P.: Optimization of the tunability of barium strontium titanate films via epitaxial stresses. J. Appl. Phys. 93, 504 2003CrossRefGoogle Scholar
27Simon, W.K., Akdogan, E.K., Safari, A.: Misfit strain relaxation in (Ba0.60Sr0.40)TiO3 epitaxial thin films on orthorhombic NdGaO3 substrates. Appl. Phys. Lett. 89, 022902 2006CrossRefGoogle Scholar
28Zhu, X.H., Chan, H.L.W., Choy, C.L., Wong, K.H.: Epitaxial growth and dielectric properties of functionally-graded (Ba1−xSrx)TiO3 thin films with stoichiometric variation. J. Vac. Sci. Technol., A 20, 1796 2002CrossRefGoogle Scholar
29Zhu, X.H., Chong, N., Chan, H.L.W., Choy, C.L., Liu, Z.G., Ming, N.B.: Epitaxial growth and planar dielectric properties of compositionally graded (Ba1−x Srx)TiO3 thin films prepared by pulsed laser deposition. Appl. Phys. Lett. 80, 3376 2002CrossRefGoogle Scholar
30Zhu, X.H., Lu, S.G., Chan, H.L.W., Choy, C.L., Wong, K.H.: Microstructures and dielectric properties of compositionally graded (Ba1−xSrx)TiO3 thin films prepared by pulsed laser deposition. Appl. Phys. A. 76, 225 2003CrossRefGoogle Scholar
31Lu, S.G., Zhu, X.H., Mak, C.L., Wong, K.H., Chan, H.L.W., Choy, C.L.: High tunability in compositionally graded epitaxial barium strontium titanate thin films by pulsed laser deposition. Appl. Phys. Lett. 82, 2877 2003CrossRefGoogle Scholar
32Lee, S.J., Moon, S.E., Ryu, H.C., Kwak, M.H., Kim, Y.T., Han, S.K.: Microwave properties of compositionally graded (Ba,Sr)TiO3 thin films according to the direction of the composition gradient for tunable microwave applications. Appl. Phys. Lett. 82, 2133 2003CrossRefGoogle Scholar
33Lee, S.J., Moon, S.E., Kwak, M.H., Ryu, H.C., Kim, Y.T., Han, S.K.: Microwave properties of compositionally graded (Ba,Sr)TiO3 thin films for electrically tunable microwave devices. Integr. Ferroelectr. 49, 151 2002CrossRefGoogle Scholar
34Zhu, X.H., Zhu, J.M., Zhou, S.H., Liu, Z.G., Ming, N.B., Chan, H.L.W., Choy, C.L., Wong, K.H., Hesse, D.: Microstructure and dielectric properties of compositionally-graded (Ba1−xSrx)TiO3 thin films. Mater. Sci. Eng., B 118, 219 2005CrossRefGoogle Scholar
35JCPDS Nos. 4-0829, 44-0093. International Center for Diffraction Data Newton Square, PA, 2001Google Scholar
36Galasso, F.S.Structure, Properties and Preparation of Perovskitetype Compounds (Pergamon Press, Oxford, 1969), Chap. 1Google Scholar
37Mathews, J.W., Blakeslee, A.E.: Defects in epitaxial multilayers: I. Misfit dislocations. J. Cryst. Growth 27, 118 1974Google Scholar
38People, R., Bean, J.C.: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strain-layer heterostructures. Appl. Phys. Lett. 47, 322 1985CrossRefGoogle Scholar

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Epitaxial growth, dielectric response, and microstructure of compositionally graded (Ba,Sr)TiO3 thin films grown on (100) MgO substrates by pulsed laser deposition
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Epitaxial growth, dielectric response, and microstructure of compositionally graded (Ba,Sr)TiO3 thin films grown on (100) MgO substrates by pulsed laser deposition
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