Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-24T07:30:07.907Z Has data issue: false hasContentIssue false

Effects of substrate crystallinity on the on-state resistance of 6H–SiC photoconductive switches

Published online by Cambridge University Press:  15 August 2012

Wei Huang
Affiliation:
Laboratory of Silicon Carbide, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Shao-Hui Chang
Affiliation:
Laboratory of Silicon Carbide, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Xue-Chao Liu*
Affiliation:
Laboratory of Silicon Carbide, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Biao Shi
Affiliation:
Laboratory of Silicon Carbide, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Tian-Yu Zhou
Affiliation:
Laboratory of Silicon Carbide, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Xi Liu
Affiliation:
Laboratory of Silicon Carbide, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Cheng-Fen Yan
Affiliation:
Laboratory of Silicon Carbide, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Yan-Qing Zhen
Affiliation:
Laboratory of Silicon Carbide, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Jian-Hua Yang
Affiliation:
Laboratory of Silicon Carbide, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Er-Wei Shi
Affiliation:
Laboratory of Silicon Carbide, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
*
a)Address all correspondence to this author. e-mail: icerain@mail.sic.ac.cn
Get access

Abstract

In this work, the relationship between the substrate crystallinity and the on-state resistances of silicon carbide (SiC) photoconductive semiconductor switches (PCSSs) was investigated. PCSSs with different channel lengths were fabricated on semi insulating 6H–SiC having different crystal qualities. A method was introduced for determining the photoconductive capacity of the SiC PCSSs. The experimental data suggest that the photoconductive capacity decreases sharply with the degradation of the full width at half maximum of the rocking curve of the 6H–SiC substrates. It is found that increasing the carrier mobility is a key factor for reducing the on-state resistance of the 6H–SiC PCSSs. Moreover, the results in this work present reference for the selection of 6H–SiC substrates for the fabrication of PCSSs and some other photoelectric devices.

Type
Articles
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Treu, M., Rupp, R., Blaschitz, P., and Hilsenbeck, J.: Commercial SiC device processing: Status and requirements with respect to SiC-based power devices. Superlattices Microstruct. 40, 380387 (2006).Google Scholar
Zhang, Q., Madangarli, V., and Sudarshan, T.S.: SiC planar MOS-Schottky diode: A high voltage Schottky diode with low leakage current. Solid State Electron. 45, 10851089 (2001).Google Scholar
Hjelmgren, H., Andersson, K., Eriksson, J., Nilsson, P.A., Sudow, M., and Rorsman, N.: Electrothermal simulations of a microwave 4H-SiC MESFET on high purity semi insulating substrate. Solid State Electron. 51, 11441152 (2007).Google Scholar
Zhu, K., Johnstone, D., Leach, J., Fu, Y., Morkoc, H., Li, G., and Ganguly, B.: High-power photoconductive switches of 4H SiC with Si3N4 passivation and n(+)-GaN subcontact. Superlattices Microstruct. 41, 264270 (2007).Google Scholar
James, C., Hettler, C., Dickens, J., and Neuber, A.: Compact silicon carbide switch for high voltage operation. IEEE International Power Modulators and High-Voltage Conference Proceedings of the 2008 1720 (2008).Google Scholar
Kelkar, K.S., Islam, N.E., Kirawanich, P., Fessler, C.M., and Nunnally, W.C.: On-state characteristics of a high-power photoconductive switch fabricated from compensated 6-H silicon carbide. IEEE Trans. Plasma Sci. 36, 287292 (2008).Google Scholar
Loubriel, G.M., Zutavern, F.J., Baca, A.G., Hjalmarson, P.P., Plut, T.A., Helgeson, W.D., Omalley, M.W., Ruebush, M.H., and Brown, D.J.: Photoconductive semiconductor switches. IEEE Trans. Plasma Sci. 25, 124130 (1997).Google Scholar
Auston, D.H.: Picosecond optoelectronic switching and gating in silicon. Appl. Phys. Lett. 26, 101103 (1975).Google Scholar
Chi, H.L.: Picosecond optoelectronic switching in GaAs. Appl. Phys. Lett. 30, 8486 (1977).Google Scholar
Shi, W. and Tian, L.Q.: Mechanism analysis of periodicity and weakening surge of GaAs photoconductive semiconductor switches. Appl. Phys. Lett. 89, 3 (2006).CrossRefGoogle Scholar
Saddow, S.E., Cho, P.S., Goldhar, J., Lee, C.H., and Neudeck, P.G.: Subnanosecond photovoltaic response in 6H–SiC. Appl. Phys. Lett. 65, 33593361 (1994).Google Scholar
Cho, P.S., Goldhar, J., Lee, C.H., Saddow, S.E., and Neudeck, P.: Photoconductive and photovoltaic response of high-dark-resistivity 6h-Sic devices. J. Appl. Phys. 77, 15911599 (1995).CrossRefGoogle Scholar
Sudarshan, T.S., Gradinaru, G., Korony, G., Mitchel, W., and Hopkins, R.H.: High-field effects in high-resistivity silicon-carbide in lateral configurations. Appl. Phys. Lett. 67, 34353437 (1995).Google Scholar
Dogan, S., Teke, A., Huang, D., Morkoc, H., Roberts, C.B., Parish, J., Ganguly, B., Smith, M., Myers, R.E., and Saddow, S.E.: 4H-SiC photoconductive switching devices for use in high-power applications. Appl. Phys. Lett. 82, 31073109 (2003).Google Scholar
Jenny, J.R., Malta, D.P., Muller, S.G., Powell, A.R., Tsvetkov, V.F., Hobgood, H.M., Glass, R.C., and Carter, C.H.: High-purity semi insulating 4H-SiC for microwave device applications. J. Electron. Mater. 32, 432436 (2003).Google Scholar
Kelkar, K.S., Islam, N.E., Fessler, C.M., and Nunnally, W.C.: Silicon carbide photoconductive switch for high-power, linear-mode operations through sub-band-gap triggering. J. Appl. Phys. 98, 93102–93102-6 (2005).Google Scholar
Zhu, K., Dogan, S., Moon, Y.T., Leach, J., Yun, F., Johnstone, D., Morkoc, H., Li, G., and Ganguly, B.: Effect of n(+)-GaN subcontact layer on 4H-SiC high-power photoconductive switch. Appl. Phys. Lett. 86, 261108–61108 (2005).Google Scholar
Mitchel, W.C., Perrin, R., Goldstein, J., Saxler, A., Roth, M., Smith, S.R., Solomon, J.S., and Evwaraye, A.O.: Fermi level control and deep levels in semi insulating 4H–SiC. J. Appl. Phys. 86, 50405044 (1999).CrossRefGoogle Scholar
Sridhara, S.G., Eperjesi, T.J., Devaty, R.P., and Choyk, W.J.: Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser-pumping wavelengths. Mater. Sci. Eng., B 61, 229233 (1999).Google Scholar
Huang, W., Chen, Z.Z., Chen, B.Y., Li, Z.Z., Chang, S.H., Yan, C.F., and Shi, E.W.: Room-temperature phonon replica in band-to-band transition of 6H-SiC analyzed using transmission spectrums. Jpn. J. Appl. Phys. 48, 100204 (2009).Google Scholar