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Crystal structure and dielectric property of epitaxially grown (Ba, Sr)TiO3 thin film prepared by molecular chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Hiroshi Funakubo
Affiliation:
Department of Inovative and Engineering Materials, Interdisciplinary Graduated School of Science and Engineering, Tokyo Institute of Technology, 4259, Nagtsuda-cho, Midori-ku, Yokohama, 226 Japan
Yutaka Takeshima
Affiliation:
Functional Materials Research Development, R & D Group, Murata Mag. Co. Ltd., Yasu-gun, Siga, 520–23, Japan
Daisuke Nagano
Affiliation:
Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, 2–12–1, Meguro-ku, O-okayama, Tokyo, 152, Japan
Kazuo Shinozaki
Affiliation:
Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, 2–12–1, Meguro-ku, O-okayama, Tokyo, 152, Japan
Nobuyasu Mizutani
Affiliation:
Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, 2–12–1, Meguro-ku, O-okayama, Tokyo, 152, Japan
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Abstract

Epitaxially grown (Ba, Sr)TiO3 thin films were prepared on (100)MgO and (100)Pt ║ (100)MgO substrates by molecular chemical vapor deposition (MOCVD). The lattice parameter increased with increasing Ba/(Ba + Sr) ratio in the film and was higher than the reported value for bulk (Ba, Sr)TiO3. The dielectric constant at room temperature reached the maximum value at a lower Ba/(Ba + Sr) ratio compared to the reported one for bulk (Ba, Sr)TiO3. The temperature showing the maximum dielectric constant was higher than the reported value for bulk (Ba, Sr)TiO3. These results can be explained by the compressive stress applied to the film under the cooling process after the deposition.

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Copyright © Materials Research Society 1998

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Crystal structure and dielectric property of epitaxially grown (Ba, Sr)TiO3 thin film prepared by molecular chemical vapor deposition
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