Hostname: page-component-8448b6f56d-c47g7 Total loading time: 0 Render date: 2024-04-19T07:42:42.995Z Has data issue: false hasContentIssue false
  • English
  • Français

GaN devices for power amplifier design

Published online by Cambridge University Press:  12 May 2009

Teresa M. Martín-Guerrero ,
Damien Ducatteau ,
Carlos Camacho-Peñalosa  and
Christophe Gaquière
Teresa M. Martín-Guerrero*
Affiliation:
Departamento de Ingeniería de Comunicaciones, E.T.S. Ingeniería de Telecomunicación, Universidad de Málaga, Campus de Teatinos, E-29071 Málaga, Spain. Phone: +34 952133395; Fax: +34 952132027
Damien Ducatteau
Affiliation:
Dépt. Hyperfréquences et Semiconducteurs, Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Université de Lille, Av. Poincaré, BP 69, F-59652 Villeneuve d'Ascq, France. Phone: +33 (0)320197829; Fax: +33 (0)320197888
Carlos Camacho-Peñalosa
Affiliation:
Departamento de Ingeniería de Comunicaciones, E.T.S. Ingeniería de Telecomunicación, Universidad de Málaga, Campus de Teatinos, E-29071 Málaga, Spain. Phone: +34 952133395; Fax: +34 952132027
Christophe Gaquière
Affiliation:
Dépt. Hyperfréquences et Semiconducteurs, Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Université de Lille, Av. Poincaré, BP 69, F-59652 Villeneuve d'Ascq, France. Phone: +33 (0)320197829; Fax: +33 (0)320197888
*
Corresponding author: T.M. Martín-Guerrero E-mail: teresa@ic.uma.es
Get access Rights & Permissions [Opens in a new window]

Abstract

This paper describes some aspects of the fabrication and modeling of a GaN device to be employed in a power amplifier covering one WiMAX frequency band. The work has been carried out in the frame of the TARGET's NoE work package WiSELPAS. Details concerning the AlGaN/GaN device technology and the performed linear and nonlinear measurements are provided. Since these new devices require specific nonlinear models, a procedure for selecting an appropriate simplified nonlinear model and for extracting its parameters is discussed and evaluated. The developed nonlinear model has been experimentally tested under linear and nonlinear conditions. The agreement between experimental and model-predicted performance suggests that the described model could be useful in a preliminary power amplifier design.

Keywords

Wide-band-gap devicesAlGaN/GaN technologyNonlinear modelPower amplifiers
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Special Issue 2: TARGET , April 2009 , pp. 137 - 143
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Lavrador, P.M.; Pedro, J.C.: An overview of WiSeLPAs: from semiconductors to linearised power amplifiers, in Proc. TARGET DAYS – 2007, Monte Porzio Catone, Italy, December 16–17, 2007, 115–119.Google Scholar
[2]Fager, C.; Pedro, J.C.; Carvalho, N.B.; Zirath, H.: Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model. IEEE Trans. Microw. Theory Tech., 50(12) (2002) 2834–2842.CrossRefGoogle Scholar
[3]Cabral, P.M.; Pedro, J.C.; Carvalho, N.B.: New nonlinear device model for microwave power GaN HEMTs, in IEEE MTT-S Int. Microwave Symp. Dig., Fort Worth, Texas, June 6–11, 2004, 51–54.CrossRefGoogle Scholar
[4]Cabral, P.M.; Pedro, J.C.; Carvalho, N.B.: Nonlinear device model of microwave power GaN HEMTs for high power-amplifier design. IEEE Trans. Microw. Theory Tech., 52(11) (2004) 2585–2592.CrossRefGoogle Scholar
[5]Applied Wave Research, Inc. (www.mwoffice.com).Google Scholar
[6]Martín-Guerrero, T.M.; García, J.A.; Ng-Molina, F.Y.; Mediavilla, A.; Camacho-Peñalosa, C.; Ducatteau, D.; Gaquière, C.: Low distortion power amplifier design based on GaN monolithic device, in Proc. 11th Int. Symp. Microwave and Optical Technology (ISMOT 2007), Monte Porzio Catone, Italy, December 17–21, 2007, 365–368.Google Scholar