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A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements

Published online by Cambridge University Press:  22 February 2019

Peng Luo ,
Frank Schnieder ,
Olof Bengtsson ,
Valeria Vadalà ,
Antonio Raffo ,
Wolfgang Heinrich  and
Matthias Rudolph
Peng Luo*
Affiliation:
Brandenburgische Technische Universität Cottbus-Senftenberg, 03046 Cottbus, Germany Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Frank Schnieder
Affiliation:
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Olof Bengtsson
Affiliation:
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Valeria Vadalà
Affiliation:
Department of Engineering, University of Ferrara, 44122 Ferrara, Italy
Antonio Raffo
Affiliation:
Department of Engineering, University of Ferrara, 44122 Ferrara, Italy
Wolfgang Heinrich
Affiliation:
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Matthias Rudolph
Affiliation:
Brandenburgische Technische Universität Cottbus-Senftenberg, 03046 Cottbus, Germany Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
*
Author for correspondence: Peng Luo, E-mail: Peng.Luo@b-tu.de
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Abstract

Accurately and efficiently modeling the drain-lag effects is crucial in nonlinear large-signal modeling for Gallium Nitride high electron mobility transistors. In this paper, a simplified yet accurate drain-lag model based on an industry standard large-signal model, i.e., the Chalmers (Angelov) model, extracted by means of pulsed S-parameter measurements, is presented. Instead of a complex nonlinear drain-lag description, only four constant parameters of the proposed drain-lag model need to be determined to accurately describe the large impacts of the drain-lag effects, e.g., drain-source current slump, typical kink observed in pulsed IV curves, and degradation of the output power. The extraction procedure of the parameters is based on pulsed S-parameter measurements, which allow to freeze traps and isolate the trapping effects from self-heating. It is also shown that the model can very accurately predict the load pull performance over a wide range of drain bias voltages. Finally, the large-signal network analyzer measurements at low frequency are used to further verify the proposed drain-lag model in the prediction of the output current in time domain under large-signal condition.

Keywords

Chalmers modeldrain-lag effectsGaN HEMT modelingpulsed S-parameter measurementstrapping effects
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 11 , Issue 2 , March 2019 , pp. 121 - 129
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2019 

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