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Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

Published online by Cambridge University Press:  21 April 2011

Olivier Jardel*
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Guillaume Callet
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64 XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Jérémy Dufraisse
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64 XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Michele Piazza
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64 XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Nicolas Sarazin
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Eric Chartier
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Mourad Oualli
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Raphaël Aubry
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Tibault Reveyrand
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Jean-Claude Jacquet
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Marie-Antoinette Di Forte Poisson
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Erwan Morvan
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Stéphane Piotrowicz
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Sylvain L. Delage
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
*
Corresponding author: O. Jardel Email: olivier.jardel@3-5lab.fr

Abstract

A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show excellent power performances and constitute a particularly interesting alternative to AlGaN/GaN HEMTs, especially for high-frequency applications beyond the X band. The measured transistors with 250 nm gate lengths from different wafers delivered in continuous wave (cw): 10.8 W/mm with 60% associated power added efficiency (PAE) at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10.24 GHz, and 4.2 W/mm with 43% associated PAE at 18 GHz.

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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References

REFERENCES

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Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process
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