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Expected progress based on aluminium galium nitride Focal Plan Array for near and deep Ultraviolet

Published online by Cambridge University Press:  11 June 2009

J.-L. Reverchon*
Affiliation:
Thales Research and Technology, RD 128, 91767 Palaiseau Cedex, France
K. Robin
Affiliation:
Thales Research and Technology, RD 128, 91767 Palaiseau Cedex, France
S. Bansropun
Affiliation:
Thales Research and Technology, RD 128, 91767 Palaiseau Cedex, France
Y. Gourdel
Affiliation:
Thales Research and Technology, RD 128, 91767 Palaiseau Cedex, France
J.-A. Robo
Affiliation:
GIE, Alcatel-Thales 3-5lab, RD 128, 91767 Palaiseau Cedex, France
J.-P. Truffer
Affiliation:
GIE, Alcatel-Thales 3-5lab, RD 128, 91767 Palaiseau Cedex, France
E. Costard
Affiliation:
GIE, Alcatel-Thales 3-5lab, RD 128, 91767 Palaiseau Cedex, France
J. Brault
Affiliation:
CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne, France
E. Frayssinet
Affiliation:
CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne, France
J.-Y. Duboz
Affiliation:
CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne, France
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Abstract

The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet detection. A camera based on such a material presents an extremely low dark current at room temperature. It can compete with technologies based on photocathodes, MCP intensifiers, back thinned CCD or hybrid CMOS focal plane arrays for low flux measurements. First, we will present results on focal plane array of 320 × 256 pixels with a pitch of 30 μm. The peak responsivity is tuned from 260 nm to 360 nm in different cameras. All these results are obtained in a standard SWIR supply chaine and with AlGaN Schottky diodes grown on sapphire. We will present here the first attempts to transfer the standard design Schottky photodiodes on from sapphire to silicon substrates. We will show the capability to remove the silicon substrate, to etch the window layer in order to extend the band width to lower wavelength and to maintain the AlGaN membrane integrity.

Type
Research Article
Copyright
© EAS, EDP Sciences, 2009

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References

Bai, Y., Bernd, S.G., Hosack, J.R., et al., 2003, SPIE, 5167
Cordier, Y., et al., 2002, Phys. stat. Sol. (c) 0, 1, 61
Duboz, J.Y., Grandjean, N., Omnes, F., Mosca, M. & Reverchon, J.L., 2005, Appl. Phys. Lett., 86, 63511 CrossRef
Duboz, J.Y., Grandjean, N., Dussaigne, A., et al., 2006, Eur. Phys. J. Appl. Phys., 33, 5 CrossRef
Duboz, J.Y., Brault, J., Truffer, J.P., et al., 2008, Proc. IWN
McClintock, R., Mayes, K., Yasan, A., Shiell, D., Kung, P., & Razeghi, M., 2005, Appl. Phys. Lett., 86, 011117-1 CrossRef
Reverchon, J.-L., Mazzeo, G., Dussaigne, A. & Duboz, J.Y., 2005, Proc. SPIE, 6398-25
Reverchon, J.L., Robot, J.A., Truffer, J.P., et al., 2007, Proc. SPIE, 6744-9
Robin, K., Reverchon, J.L., Mugherli, L., et al., 2008, Biosensors Bioelectron.

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Expected progress based on aluminium galium nitride Focal Plan Array for near and deep Ultraviolet
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