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Measurement of Relaxation in Strained Layer Semiconductor Structures

Published online by Cambridge University Press:  06 March 2019

Mary A. G. Halliwell
Mary A. G. Halliwell*
Affiliation:
British Telecom Research Laboratories Martlesham Heath IPSWICH IP5 7RE, United Kingdom
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Extract

Many advanced semiconductor device designs require the growth of heteroepitaxial layers with lattice parameters differing by up to a few percent with respect to the substrate. X-ray diffraction offers a nondestructive method of determining the extent of relaxation. This paper discusses the sensitivity of x-ray techniques to small amounts of relaxation, describes how relaxation is measured in cubic materials for layer on (001) substrates and suggests nomenclature for the case of asymmetric relaxation.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 33: Thirty-Eighth Annual Conference on Applications of X-ray Analysis, July 31 - August 4, 1989 , 1989 , pp. 61 - 66
Copyright
Copyright © International Centre for Diffraction Data 1989

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References

Brantley, W.A., 1973, Calculated elastic constants for stress problems associated with semiconductor devices, J. Appl. Phys. 44:534.Google Scholar
Halliwell, M.A.G. 1981, X-ray measurements of lattice mismatch in heteroepitaxial layers, Inst. Phys. Conf. Ser. 60:271 Google Scholar
Halliwell, M.A.G., Lyons, M.H., Davey, S.T., Hockly, M., Tuppen, C.G., and Gibbings, C.J., 1989, Estimation of percentage relaxation in Si/Si1-XGex strained-layer superlattices, Semicond. Sci. Technol. 4:10 Google Scholar
Nagai, H., 1981, Dislocation velocities in indium phosphide, Jpn. J. Appl. Phys. 20:793 Google Scholar
Tuppen, C.G., Gibbings, C.J., Hockly, M. and Halliwell, M.A.G., 1989, Asymmetric strain distribution produced by the preferential nucleation of misfit dislocations, submitted to Appl. Phys. Lett.Google Scholar