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7 - Holes in quantum dot molecules: structure, symmetry, and spin

from Part II - Manipulation of individual quantum states in quantum dots using optical techniques

Published online by Cambridge University Press:  05 August 2012

By
M. F. Doty  and
J. I. Climente
Edited by
Alexander Tartakovskii
M. F. Doty
Affiliation:
University of Delaware, USA
J. I. Climente
Affiliation:
Universitat Jaume I, Spain
Alexander Tartakovskii
Affiliation:
University of Sheffield
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Summary

Introduction

The spin projections of single electrons and holes confined in quantum dots (QDs) provide a natural two-level system that can serve as the logical basis for both classical and quantum information processing devices. When two layers of self-assembled InGaAs QDs are grown sequentially, strain propagation causes QDs in the two layers to align along the growth direction. Coherent tunneling of either electrons or holes between the two QDs leads to a variety of Coulomb and spin interactions with possible applications in optoelectronic and logic devices [4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15]. Because coherent tunneling leads to the formation of delocalized molecular states, these vertically stacked pairs of QDs have come to be known as quantum dot molecules (QDMs). One of the surprising discoveries about QDMs was that the delocalized molecular states have their own unique and tunable properties [16]. In this chapter we review the formation of delocalized molecular states of holes in QDMs and consider how the structure and symmetry of the QDM influence spin properties. Results have been obtained for molecular states charged with one, two, and three holes [9, 13, 17]. We focus here on molecular states occupied by a single hole whose spin projections could serve as the basis for optoelectronic logic devices.

Hole spins were initially discounted for spin-based devices because the complex valence-band interactions were anticipated to degrade spin storage or decoherence times.

Type
Chapter
Information
Quantum Dots
Optics, Electron Transport and Future Applications
 , pp. 118 - 134
Publisher: Cambridge University Press
Print publication year: 2012

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