Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-20T04:26:12.064Z Has data issue: false hasContentIssue false
  • English
  • Français

Cavity Evolution in High Strength Electroless Copper

Published online by Cambridge University Press:  25 February 2011

A. J. Pedraza ,
M. J. Godbole  and
J. R. Toth
A. J. Pedraza
Affiliation:
The University of Tennessee, Department of Materials Science and Engineering, Knoxville, TN 37996-2200
M. J. Godbole
Affiliation:
The University of Tennessee, Department of Materials Science and Engineering, Knoxville, TN 37996-2200
J. R. Toth
Affiliation:
Digital Equipment Corporation, R & D Center For Printed Wiring Boards, 200 Fairforest Way, Greenville, SC 29607-4498
Get access

Abstract

Several industrial facilities produce electroless copper for use in printed circuit boards. One major class is the high- strength copper, so called because of its extremely high strength. During the deposition process, hydrogen is commonly incorporated into the film and it is thought to be the cause of poor ductility.

In this work, the hydrogen content was measured by the fusion technique in three sets of high strength electroless copper specimens, respectively annealed at 423, 520 and 573 K. The hydrogen content decreased very rapidly at the two higher temperatures, and tended to a saturation value of approximately 20 ppm by weight with increasing annealing time. The cavity evolution with annealing time at 520 and 573 K was studied by transmission electron microscopy (TEM). It was found that the number of cavities increased with annealing time and with increasing temperature.

The data indicate that hydrogen degassing is not controlled by bulk diffusion and, hence, that hydrogen must be trapped. A comparison with recrystallization results demonstrates that more than half of the hydrogen retained in the electroless copper is in saturable traps. The TEM observations indicate that cavity coarsening takes place during annealing at 520 and 573 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 329
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pedraza, A. J. and Godbole, M. J., Scripta Met. 24, 1185, (1989).Google Scholar
2. Godbole, M. J. and Pedraza, A. J., Scripta Met. 24, 1191, (1989).Google Scholar
3. Nakahara, S., Acta Met. 36, 1669 (1988).Google Scholar
4. Wampler, W. R., Schober, T. and Lengeler, B., Phil. Mag. 34, 129, (1976).Google Scholar
5. Graebner, J. E. and Okinaka, Y., J. Appl. Phys. 60, 36 (1986).Google Scholar
6. Defect Analysis in Electron Microscopy, Loretto, M. H. and Smallman, R. E., Chapman and Hall, London, 57 (1975)Google Scholar
7. Bever, M. and Floe, C., Trans. AIME 156, 149, (1944).Google Scholar
8. Johnson, H. H., Quick, N., and Kumnick, A. J., Scripta Met. 13, 67 (1979)Google Scholar
9. Pedraza, A. J., Godbole, M. J., Park, J. W. and Margetts, B. J., 1990, unpublished.Google Scholar
10. Handbook of Chemistry and Physics, 55th Ed., CRC Press, Cleveland, OH, D–157 (1975)Google Scholar