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Properties of Reactively Sputter Deposited SrTiO3 Films for IR Detector Readout Electronics

Published online by Cambridge University Press:  15 February 2011

S.D. Bernstein ,
T.Y. Wong ,
J.K. Rawson  and
R.W. Tustison
S.D. Bernstein
Affiliation:
Raytheon Company, Research Division, Lexington, MA.
T.Y. Wong
Affiliation:
Raytheon Company, Research Division, Lexington, MA.
J.K. Rawson
Affiliation:
Raytheon Company, Research Division, Lexington, MA.
R.W. Tustison
Affiliation:
Raytheon Company, Research Division, Lexington, MA.
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Abstract

The effects of film thickness, oxygen partial pressure, electrode type, substrate temperature, and position on the room temperature and 77 K dielectric properties of SrTiO3 (ST) films were studied. The film composition and properties vary with radial position and oxygen partial pressure. A maximum in dielectric constant occurs near the same position where stoichiometric films are obtained. The room temperature and 77K dielectric constants increase with increasing thickness, while the capacitance density decreases. Capacitance densities as high as 4 fF/μm2 were observed for films deposited at low temperature and subsequently crystallized. Elevated temperature deposition, however, results in better properties than room temperature deposition followed by annealing. Dielectric constants as high as 200 with capacitance densities up to 9 fF/μ2 were observed. For optimized deposition conditions, no dielectric break-down of the capacitors was observed at 20V after 111 days of testing. The properties of capacitors with n+Si bottom electrodes were not as good as those with Ti/Pt electrodes, however, integration with Si integrated circuit processing is expected to be much simpler.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 595
Copyright
Copyright © Materials Research Society 1995

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References

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