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In-situ Observation of Silicon Epitaxy Breakdown with Real-Time Spectroscopic Ellipsometry

Published online by Cambridge University Press:  21 March 2011

Charles W. Teplin ,
Dean H. Levi ,
Qi Wang ,
Eugene Iwaniczko ,
Kim M. Jones  and
Howard M. Branz
Charles W. Teplin
Affiliation:
National Center for Photovoltaics National Renewable Energy Laboratory 1617 Cole Blvd. Golden, CO 80401, U.S.A.
Dean H. Levi
Affiliation:
National Center for Photovoltaics National Renewable Energy Laboratory 1617 Cole Blvd. Golden, CO 80401, U.S.A.
Qi Wang
Affiliation:
National Center for Photovoltaics National Renewable Energy Laboratory 1617 Cole Blvd. Golden, CO 80401, U.S.A.
Eugene Iwaniczko
Affiliation:
National Center for Photovoltaics National Renewable Energy Laboratory 1617 Cole Blvd. Golden, CO 80401, U.S.A.
Kim M. Jones
Affiliation:
National Center for Photovoltaics National Renewable Energy Laboratory 1617 Cole Blvd. Golden, CO 80401, U.S.A.
Howard M. Branz
Affiliation:
National Center for Photovoltaics National Renewable Energy Laboratory 1617 Cole Blvd. Golden, CO 80401, U.S.A.
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Abstract

We use in-situ real-time spectroscopic ellipsometry to observe the breakdown of silicon epitaxy during growth by hot-wire chemical vapor deposition (HWCVD) on Si (100) substrates. Representative data is presented for the two types of epitaxy breakdown that we have observed: 1) an immediate transition to hydrogenated amorphous silicon (a-Si:H), and 2) a slower transition where a-Si:H cones nucleate and grow until they eclipse further epitaxial growth. Simple models, consistent with transmission-electron and atomic-force micrographs, describe the evolution of both types of breakdown showing that real-time spectroscopic ellipsometry is a useful tool for monitoring the growth of epitaxial silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A5.1
Copyright
Copyright © Materials Research Society 2004

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References

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