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Intrinsic Carrier Concentrations in Long Wavelength HgCdTe Based on the New, Nonlinear Temperature Dependence of Eg(x,T)†

Published online by Cambridge University Press:  25 February 2011

D. G. Seiler ,
J. R. Lowney ,
C. L. Littler  and
I. T. Yoon
D. G. Seiler
Affiliation:
Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899
J. R. Lowney
Affiliation:
Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899
C. L. Littler
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203
I. T. Yoon
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203
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Abstract

Intrinsic carrier concentrations of narrow-gap Hg1-xCdxTe alloys (0.17≦ x ≦0.30) have been calculated as a function of temperature between 0 and 300 K by using the new nonlinear temperature dependence of the energy gap obtained previously by twophoton magneto-absorption measurements for samples with 0.24≦ x ≦0.26. We report here experimental values for Eg(x,T) for samples with x = 0.20 and 0.23 obtained by one-photon magneto-absorption measurements. These data confirm the validity of the new Eg(x,T) relationship for these : values. In this range of composition and temperature, the energy gap of mercury cadmium telluride is small, and very accurate values are needed for the gap to obtain reliable values for the intrinsic carrier density. Large percentage differences exist between our new calculations and previous values for ni at low temperatures. Even at 77 K, differences approaching 10 percent exist, confirming the importance of using the new ni results for materials and device characterization and a proper understanding of device operation in long-wavelength materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 59
Copyright
Copyright © Materials Research Society 1991

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Footnotes

†

Contribution of the National Institute of Standards and Technology; not subject to copyright.

References

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