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Optical Investigations of InAs Growth on GaAs and Lasing in Singly and Multiply Stacked Island Quantum Boxes

Published online by Cambridge University Press:  03 September 2012

A. Kalburge ,
T. R. Ramachandran ,
R. Heitz ,
Q. Xie ,
P. Chen  and
A. Madhukar
A. Kalburge
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089-0241.
T. R. Ramachandran
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089-0241.
R. Heitz
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089-0241.
Q. Xie
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089-0241.
P. Chen
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089-0241.
A. Madhukar
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089-0241.
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Abstract

We report on the optical investigations of InAs growth on GaAs. In-situ STM/AFM studies show the presence of features 2-4 ML high, which we call quasi-3D (Q3D) clusters, well in advance of 3D island formation. Though the photoluminescence (PL) emission from these Q3D clusters is in the same wavelength regime as that from well developed 3D islands, they show characteristic differences in the PL excitation spectra and temperature dependence of PL, distinguishing them clearly from the 3D islands. Finally, we discuss the lasing observed from lasers containing single and five sets of InAs layers grown with conditions in which the in-situ STM/AFM studies show only 3D islands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 487
Copyright
Copyright © Materials Research Society 1997

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