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The Epitactic Growth of Oxides on Si

Published online by Cambridge University Press:  25 February 2011

Scott R. Summerfelt
Scott R. Summerfelt*
Affiliation:
Texas Instruments, Inc., Dallas, TX 75243
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Abstract

The epitactic growth of oxides on Si requires structural and chemical compatibility between the substrate and film. The growth of (Ba0.7,Sr0.3)TiO3 (BST) by pulsed laser deposition on HF-cleaned Si (001) and Si with a buffer layer of CaF2 was studied. The BST can form a low misfit interface with Si and CaF2 but chemical reactions between the BST and the Si prevented the epitactic growth on Si. An x-ray photoelectron spectroscopy (XPS) depth profile indicated that the BST had reacted to form a silicate and titanium silicide. The BST on CaF2 -Si(00l) substrate was partially epitactic and formed a 45° rotated orientation relationship such that the Si (110) is parallel to the BST (100).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 29
Copyright
Copyright © Materials Research Society 1991

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References

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