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Copper ohmic contacts to n-type SiC formed with pulsed excimer laser irradiation

Published online by Cambridge University Press:  21 March 2011

K. Abe ,
M. Sumitomo ,
O. Eryu  and
K. Nakashima
K. Abe
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
M. Sumitomo
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
O. Eryu
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
K. Nakashima
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
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Abstract

Copper-based ohmic contacts to n-type 6H-SiC have been investigated. In this study, ohmic contacts have been fabricated with pulsed excimer laser irradiation to Cu-deposited substrates at room temperature. It is shown that current-voltage characteristics depend on the laser energy density. Contacts formed by the laser irradiation at the energy density above 1.2 J/cm2 have shown the ohmic behavior. Cu atoms have slightly diffused into SiC by the laser irradiation at 1.4 J/cm2. As a result, a thin ohmic contact layer has been obtained by the laser processing. AES and XRD study have revealed that a Cu-SiC alloy containing Cu silicide (Cu3Si) is formed by the laser irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E9.20
Copyright
Copyright © Materials Research Society 2001

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References

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