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Group IV Nanocrystals for Silicon Photovoltaics

Published online by Cambridge University Press:  26 January 2011

X. Liu
Affiliation:
Dept. of Physics, CUNY-Graduate Center, New York, NY, United States Dept. of Physics, CUNY-Queens College, Flushing, NY, United States
S. Saini
Affiliation:
Dept. of Physics, CUNY-Graduate Center, New York, NY, United States Dept. of Physics, CUNY-Queens College, Flushing, NY, United States
M. Vanhoutte
Affiliation:
Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States
J. Bakalis
Affiliation:
Dept. of Physics, CUNY-Queens College, Flushing, NY, United States
W. Yau
Affiliation:
Dept. of Physics, CUNY-Queens College, Flushing, NY, United States
A. Eshed
Affiliation:
Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States
L.C. Kimerling
Affiliation:
Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States
N. Pervez
Affiliation:
Depts. of Electrical Engineering & Mechanical Engineering, Columbia University, New York, NY, United States
I. Kymissis
Affiliation:
Depts. of Electrical Engineering & Mechanical Engineering, Columbia University, New York, NY, United States
C.W. Wong
Affiliation:
Depts. of Electrical Engineering & Mechanical Engineering, Columbia University, New York, NY, United States
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Abstract

Silicon nanocrystals (nc-Si), have been shown to act as opto-electronic centers enabling light emission by carrier recombination, when precipitated in a silicon nitride (Si3N4) host. In this work, nc-Si and Germanium nanocrystals (nc-Ge) are studied in sputtered films of Si3N4 and SiGeN for application as tandem cell layers in a Si solar cell. The samples are annealed in a nitrogen gas and forming gas ambient, from 500 ºC to 900 ºC, to investigate the influence of temperature on photoluminescence and photoconductivity.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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