No CrossRef data available.
Article contents
Luminescence of TM3+ in Gallium Arsenide Grown by Metal-Organic Vapor Phase Epitaxy
Published online by Cambridge University Press: 21 February 2011
Abstract
We investigate the excitation mechanism of the characteristic 4f luminescence 3H5 →3H6 of Tm3+ in GaAs by photoluminescence excitation spectroscopy. This luminescence transition is also used to study the incorporation of thulium into the GaAs lattice by angular dependent Zeeman spectroscopy.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1993