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Impact of Emissivity-Independent Temperature Control in Rapid Thermal Processing

Published online by Cambridge University Press:  10 February 2011

Minseok Oh ,
Binh Nguyenphiu ,
Robert Huang ,
Yi Ma ,
Stefanie Chaplin ,
David Brady  and
Cynthia Lee
Minseok Oh
Affiliation:
Lucent Technologies Inc., Bell Laboratories, Orlando, FL 32819
Binh Nguyenphiu
Affiliation:
Lucent Technologies Inc., Microelectronics Group, Orlando, FL 32819
Robert Huang
Affiliation:
Lucent Technologies Inc., Bell Laboratories, Orlando, FL 32819
Yi Ma
Affiliation:
Lucent Technologies Inc., Bell Laboratories, Orlando, FL 32819
Stefanie Chaplin
Affiliation:
Lucent Technologies Inc., Bell Laboratories, Orlando, FL 32819
David Brady
Affiliation:
Lucent Technologies Inc., Bell Laboratories, Orlando, FL 32819
Cynthia Lee
Affiliation:
Lucent Technologies Inc., Bell Laboratories, Orlando, FL 32819
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Abstract

Due to polycrystallization, the emissivity of amorphous silicon is known to vary during annealing at temperatures above 500°C. This transition from α-Si to poly-Si usually occurs during the ramp and the beginning of steady stages of the rapid thermal process. However, the majority of current temperature control methods in RTP neglect time-dependent change of emissivity, and the temperature profile of process calibration is different from that of real annealing process. Various kinds of wafers with in-situ doped amorphous Si are investigated using emissivity-independent temperature control. Some process parameters and material parameters, such as ramp rate and doping level, are explored to study their influences on emissivity change, and consequently on electrical and optical parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 43
Copyright
Copyright © Materials Research Society 1997

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References

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